IGBT design method

A design method and parameter technology, applied in design optimization/simulation, electrical components, circuits, etc., can solve the problems of long tape-out experiment cycle and high cost, and achieve the effect of shortening the design cycle and design cost

Active Publication Date: 2020-05-15
安徽瑞迪微电子有限公司
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The embodiment of the present invention provides an IGBT design method, aiming to solve the problems of long cycle and high cost in tape-out experiments

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT design method
  • IGBT design method
  • IGBT design method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] figure 1 The flowchart of the IGBT design method provided by the embodiment of the present invention, the method specifically includes the following steps:

[0036] S1, constructing the cell model of IGBT;

[0037] Using semiconductor device structure and process simulation software to build the IGBT cell structure, the schematic diagram of the IGBT cell structure is as follows figure 2 As shown, from the bottom to the top, the collector, the P+ substrate, the N buffer zone, the N drift region, the P-type layer and the gate arranged in parallel on the N drift region, between the gate and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention is applicable to the technical field of IGBT design, and provides an IGBT design method, which comprises the following steps: S1, constructing a cellular model of an IGBT; s2, adjustinga single IGBT parameter on the IGBT cellular model, wherein the IGBT parameter comprises a cellular structure parameter and a process parameter; and obtaining IGBT performance index values of the IGBTparameters under different values; s3, respectively carrying out curve fitting on the IGBT performance index data corresponding to each IGBT parameter to obtain a fitting curve of a plurality of groups of IGBT parameters and IGBT performance indexes and corresponding functions; and S4, importing the function of each group of IGBT parameters and the IGBT performance index into a target optimization function, taking each IGBT parameter as an input quantity and the target performance index of the IGBT as an output quantity in a cellular model of the IGBT, and searching an optimal IGBT parametercombination conforming to the target performance index of the IGBT. The required IGBT structure can be quickly positioned through simulation software, and the structure process parameters of the IGBTstructure can be determined, so that the design period and the design cost of the IGBT are greatly shortened and reduced.

Description

technical field [0001] The invention belongs to the technical field of IGBT design and provides an IGBT design method. Background technique [0002] With the frequency conversion of household appliances, the IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) in the frequency conversion electronic control system is an indispensable power device to drive the frequency conversion motor or frequency conversion compressor, and plays a role in the cause of energy saving and emission reduction. increasingly important role. [0003] IGBT is designed for thyristor MOS gate, which is a vertical four-layer structure with V-shaped communication area, which contains MOS gate structure. The IGBT is designed in series with a forward conduction diode on the MOS structure. When conducting conduction, a large number of majority carriers are injected into the drift region of the MOS structure through the diode, thereby enhancing the current capability of the MOS tube;...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20H01L29/739
CPCH01L29/7397
Inventor 陶少勇温世达吕磊
Owner 安徽瑞迪微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap