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Base and mocvd device with the base

A base and substrate technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of low temperature, low yield, high manufacturing cost, and achieve the effect of high yield

Active Publication Date: 2022-04-12
TES CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] However, in the case of using a cascaded induction coil, when a cylindrical susceptor having a diameter of 100 mm or more is used due to the imbalance of the induced current inside the susceptor, there is a temperature difference in the central portion above the susceptor. The problem point that the edge part is significantly low
[0018] That is, there is a problem that the unevenness of the induced current causes temperature unevenness above the susceptor, and the temperature unevenness spreads to the temperature unevenness of the substrate placed on the susceptor supporting surface, resulting in a decrease in characteristic uniformity and production. The rate is reduced, so there is a problem of high manufacturing cost

Method used

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  • Base and mocvd device with the base
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  • Base and mocvd device with the base

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Embodiment Construction

[0051] by reference to the attached Figure 1 The advantages, features and methods of realizing the present invention will be clarified with the embodiments described in detail later. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms different from each other. The scope of the present invention is provided with the understanding in mind, and the present invention is defined only by the scope of the claims.

[0052] Although first, second, etc. are used to describe various constituent elements, it is obvious that these constituent elements are not limited to these terms. These terms are used only to distinguish one element from another element. Therefore, it is obvious that the first constituent element mentioned below may also be the second constituent element within the scope of the technical concept of the present invention. At the same time, it is obvious that even if it is described that the second ...

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Abstract

The present invention relates to a susceptor capable of reducing temperature variation on a support surface by coating, and an MOCVD apparatus provided with the susceptor. According to an embodiment of the present invention, the susceptor may have a support surface that supports the substrate while in contact with the substrate, and a side surface connected to the support surface, and the susceptor is configured to be inductively heated by an induction coil to heat the substrate. The substrate is heated while being supported. It may be that the base includes: a base material, made of a material capable of inductively heating in response to the induction coil; and a coating, coated on a part or all of the surface of the base material to form the supporting surface A part or all of it, and has a magnetic property different from that of the base material. According to the susceptor of the present invention and the MOCVD apparatus provided with the susceptor, by reducing the temperature unevenness on the supporting surface of the supporting substrate, it is possible to grow a thin film with more uniform characteristics on the substrate, and by using the substrate grown based on the MOCVD process, High yields can be achieved in component fabrication. In addition, according to the MOCVD apparatus of the present invention, it is possible to accurately measure the temperature on the support surface.

Description

technical field [0001] The present invention relates to a susceptor and an MOCVD apparatus provided with the susceptor, more particularly to a susceptor capable of measuring the correct temperature on the supporting surface by reducing the temperature deviation on the supporting surface by coating and having the substrate Seat MOCVD device. Background technique [0002] Chemical Vapor Deposition (CVD; Chemical Vapor Deposition) refers to a technique in which a raw material gas is flowed on a coated substrate and external energy is applied to decompose the raw material gas to form a thin film through a gas phase chemical reaction. [0003] In order to perform chemical reactions normally, various process conditions and environments need to be precisely controlled, and energy for activation needs to be supplied so that raw material gases spontaneously cause chemical reactions. [0004] Chemical vapor deposition can be divided into LPCVD (Low PressureCVD; Low Pressure Chemical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C23C16/18H01L21/683
CPCH01L21/683C23C16/18C23C16/458C23C16/4581C23C16/4586
Inventor 赵广一金南绪崔成哲
Owner TES CO LTD
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