Graphene/lead sulfide infrared detector and manufacturing method thereof
An infrared detector, lead sulfide technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of complex process, low efficiency, poor quality of lead sulfide film formation, etc. Simple process and good experimental repeatability
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Embodiment 1
[0038] refer to figure 1 and figure 2 , are respectively a flowchart of an embodiment of a preparation method of a graphene / lead sulfide infrared detector and a schematic cross-sectional structure diagram of an embodiment of a graphene / lead sulfide infrared detector of the present invention. Specifically, a kind of preparation method of graphene / lead sulfide infrared detector comprises the following steps:
[0039] S10: prepare a graphene film and transfer it to a clean substrate; then perform step S20;
[0040] In this embodiment, a silicon wafer with a silicon dioxide layer on its surface is selected as the substrate 1 .
[0041] In this embodiment, before using the substrate 1, ultrasonically clean it with acetone, alcohol, and deionized water for 10 minutes, and then dry it with nitrogen for use; then, on the copper foil base, use chemical vapor deposition to prepare single-layer graphene Film 2.
[0042] In this implementation, the prepared graphene film 2 is transfe...
Embodiment 2
[0054] In the present embodiment, it is intended to prepare a graphene / lead sulfide infrared detector with a double-layer graphene film 2, and its structure is similar to figure 2 , the difference is that in this embodiment, the graphene film 2 has two layers.
[0055] In this embodiment, the preparation method can refer to Example 1, the difference is:
[0056] In the present embodiment, the transfer graphene film step in step S10 needs to be repeated once to obtain a double-layer graphene film 2;
[0057] The ligand of the lead sulfide quantum dots used in the preparation of the lead sulfide seed layer 4 is EDT;
[0058] Further, other steps are the same as in Example 1, and finally a graphene / lead sulfide infrared detector with two layers of graphene film 2 is obtained.
[0059] After testing, the graphene / lead sulfide infrared detector of the two-layer graphene film 2 obtained by the steps in this embodiment measures the responsivity of the device under the incident lig...
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