Texturing liquid for texturing polycrystalline silicon wafer and texturing method using texturing liquid

Abstract

The invention provides texturing liquid for texturing a polycrystalline silicon wafer. The texturing liquid is prepared from raw materials in percentage, by weight, 50-55 % of HNO3, 12-17 % of HF, 0.5-0.7 % of additive and the balance of water, wherein the additive is prepared from raw materials in percentage, by weight, 1%-20% of CH3COOH, 1%-20% of H3PO4, 1-20% of H2SO4 and the balance of water.The preparation method comprises steps of putting a polycrystalline silicon wafer into texturing solution to react for 30-60 seconds at the reaction temperature of 8-12 DEG C, and controlling the texturing corrosion amount to be 0.24-0.26 g / pcs. The method is advantaged in that the texturing process is continuously optimized, when the texturing corrosion amount is controlled to be 0.24-0.26 g / pcs,a production line is compatible, a textured surface is excellent, appearance of a battery piece is not abnormal, conversion efficiency of the finished battery piece is improved, a small and uniform textured surface is formed on a surface of the battery piece, reflectivity of the textured surface is reduced, use of chemicals is reduced, and cost is saved.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon wafer processing, and relates to a texturing liquid for texturing polycrystalline silicon wafers and a method for using the texturing liquid. Background technique [0002] Under certain process conditions, the surface texture of the polycrystalline diamond wire battery has a concave-convex surface topography, which can not only reduce the reflectivity of the surface, but also form light traps inside the battery, thereby improving the performance of the battery sheet. In terms of conversion efficiency, the textured structure increases the effective length of light moving in the silicon wafer, which is conducive to the absorption of light by the silicon matrix. [0003] At present, the wet texturing of polycrystalline silicon wafers in the prior art often uses HF, HNO 3 The mixed solution with pure water corrodes the polysilicon wafer and forms a worm-like structure on the surface o...

AI Technical Summary

Problems solved by technology

[0004] However, existing HF / HNO 3 The cashmere yield and uniformity of the / DI texturing system are still not optimal, the reflectivity is still high, and the amount of chemicals is large, and it is difficult for the existing conventional production line to adjust the composition of the various components of the texturing system. Ratio, so as to control the corrosion amount to optimize the textured surface, and then improve the conversion efficiency of the cell. Generally, if the corrosion amount is too low, the opening of the silicon wafer textured surface will be small, and the cashmere rate will be abnormal. If the corrosion amount is too large, chemicals will be wasted. , the uniformity of the suede becomes poor, and there may be a risk of flower flakes

Images