Insulated gate bipolar transistor packaging module

Abstract

The invention relates to an insulated gate bipolar transistor packaging module. The module comprises an insulated gate bipolar transistor, a collector lead, an emitter lead and a gate lead. A collector leading-out terminal, an emitter leading-out terminal and a gate leading-out terminal are located on the same side of the insulated gate bipolar transistor packaging module, and the emitter leading-out terminal is located between the collector leading-out terminal and the gate leading-out terminal. The emitter leading-out terminal is arranged between the collector leading-out terminal and the gate leading-out terminal so that the collector leading-out terminal and the gate leading-out terminal are positioned on an upper side and a lower side of the emitter leading-out terminal; a driving signal can be conveniently input into an insulated gate bipolar transistor through the collector leading-out terminal and the gate leading-out terminal; an element distribution design and a wiring designcan be conveniently performed on a circuit adopting the insulated gate bipolar transistor packaging module, and meanwhile a circuit application range of the insulated gate bipolar transistor packaging module is expanded.

Description

technical field [0001] The application belongs to the technical field of semiconductor power devices, and in particular relates to an insulated gate bipolar transistor packaging module. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is composed of Bipolar Junction Transistor (BJT) and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) The composite fully controlled-voltage-driven-power semiconductor device, which has the characteristics of self-shutdown. Simply put, it is a non-on or off switch. IGBT has no function of amplifying voltage. It can be regarded as a wire when it is turned on, and it is regarded as an open circuit when it is turned off. IGBT combines the advantages of BJT and MOSFET, such as low driving power and saturation voltage drop. [0003] IGBT is the core device of energy conversion and transmission, and the "CPU" of power electronic devices. The use of IGBT for power conversion can improve the efficiency and quality of ...

AI Technical Summary

Problems solved by technology

[0004] However, the order of the pins of the existing IGBT package modules is generally the gate (G), the collector (C) and the emitter (E), such as figure 1 As shown in , the gate (G) is used to input the driving voltage of the IGBT, and during the design and layout of the integrated circuit board, it is likely that the high-power driving circuit components are densely designed at the bottom of the circuit board, and according to In the pin order of the current IGBT chip, the gate (G) of the drive signal input terminal is at the top, which causes the circuit wiring to cross. The components and circuit layout of the circuit board are of low quality

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