Method for depositing an insulating material into a via
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of insulating material layer and conductive hole, applied in metal material coating process, circuit, electrical components and other directions, can solve the problem of unavailability and so on
Active Publication Date: 2020-04-17
COOPERS GMBH
View PDF7 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0014] The deposition technique of the present invention cannot achieve a "discontinuity" in the thickness at the bottom of the via, thus requiring extensive etching in subsequent steps to make contact with the metal present below the via
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment approach
[0071] - the duration TI1 of one pulse of the first pulse sequence and / or the duration TI2 of one pulse of the second pulse sequence may be in the range of 0.02 s to 1 s, respectively;
[0072] - the time interval D1 between two pulses of the first pulse sequence and the time interval D2 between two pulses of the second pulse sequence may be in the range of 0.02s to 1s, respectively;
[0073] According to other implementations:
[0074] - the duration TI1 of one pulse of the first pulse sequence and the duration TI2 of one pulse of the second pulse sequence may be in the range of 1 s to 5 s, respectively;
[0075] - the time interval D1 between two pulses of the first pulse sequence and the time interval D2 between two pulses of the second pulse sequence may be in the range of 1 s to 10 s, respectively;
[0076] By definition, a plasma corresponds to an excited or ionized state of a gas, which further corresponds to the transfer of electrical energy from an electrical source ...
no. 1 approach
[0087] Similar to Sequence 1 and Sequence 2, the following terms are defined for Sequence 3 of the plasma as follows:
[0088] - Duration of one plasma pulse: TIp
[0089] - Time interval between two consecutive plasma pulses: Dp.
[0090] In the specific example of plasma sequence 3, the plasma pulse corresponds to the pulse of injection sequence 2 of the second chemical species. Thus, duration TIp corresponds to duration TI2, and time interval Dp corresponds to time interval D2.
[0091] E.g,
[0092] - the duration TIp of one plasma pulse may be in the range of 0.02s to 5s, and the time interval Dp between two plasma pulses may be in the range of 0.02s to 10s;
[0093] - the duration TIp of one plasma pulse may be in the range of 0.02s to 1s, and the time interval Dp between two plasma pulses may be in the range of 0.02s to 1s;
[0094] - the duration TIp of one plasma pulse may be in the range of 1 s to 5 s, and the time interval Dp between two plasma pulses may be in ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
A method for depositing a layer (4, 5, 6) of a material onto a substrate (20), comprising: -one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; -one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; -one sequential generation of a plasma of the first chemical species and / or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency(HF) plasma source power ratio being above 1.
Description
technical field [0001] The present invention relates to a method of depositing insulating (ie dielectric) material into conductive vias (vias), more precisely "through silicon vias". [0002] Such a deposition method is a special implementation of a method for spraying chemical species in a gaseous state, for applications such as vapor deposition of a layer onto a substrate in a reactor. Background technique [0003] Various manufacturing or surface treatment methods include the steps of sequentially injecting gaseous reactants into a reactor. This results in the reactants being injected in a pulsed sequence, as opposed to continuously injecting the reactants into the reactor. Such pulsed injection allows better control over the amount of reactive elements introduced, the duration of contact between the various reactants and their residence time in the reactor. [0004] Among the methods using pulsed injection of reactants, mention may be made of "chemical vapor deposition...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more