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Preparation method of biferroelectric bismuth ferrite/bismuth vanadatephotoelectrochemical film

A photoelectrochemical, bismuth ferrite technology, applied in electrolytic inorganic material coating, energy input, coating, etc., can solve the problem of low photocurrent density of photoanode, achieve low size and shape requirements, uniform film quality, photocatalytic The effect of excellent performance

Active Publication Date: 2020-04-14
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently obtained BiVO 4 The actual photocurrent density of the photoanode is much lower than the theoretical value, which is mainly due to the BiVO 4 It is caused by the electron-hole recombination of the photoanode, so it is very important to modify it

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0021] 1) Clean the conductive glass FTO (2cm*2cm), use detergent and water, deionized water, and acetone to ultrasonically clean for 10 minutes, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol) The mixed solution was ultrasonically cleaned for 60 minutes;

[0022] 2) Dissolve 0.04M bismuth nitrate pentahydrate and 0.4M potassium iodide in 50ml deionized water, and add 0.01M metal nitrate ion Co 2+ , then add nitric acid to adjust the pH to 2, and stir evenly to obtain solution A;

[0023] 3) Dissolve 0.23M p-benzoquinone in 20ml ethanol and stir for 10 minutes to obtain solution B;

[0024] 4) Mix solution A and solution B as an electrodeposition solution, and use a three-electrode method for electrodeposition, with FTO as a working electrode, Ag / AgCl as a reference electrode, and platinum wire as a counter electrode. Deposit at a constant potential of -0.1V vs (Ag / AgCl) for 5 minutes, and wash with deionized water to obtain a thin film electrode...

Embodiment example 2

[0027] 1) Clean the conductive glass FTO (2cm*2cm), use detergent and water, deionized water, and acetone to ultrasonically clean for 20 minutes, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol) The mixed solution was ultrasonically cleaned for 40 minutes;

[0028] 2) Dissolve 0.2M bismuth nitrate pentahydrate and 0.4M potassium iodide in 50ml deionized water, and add 0.005M metal lead chloride ion Pd 2+ , then add nitric acid to adjust the pH to 2, and stir evenly to obtain solution A;

[0029] 3) Dissolve 0.5M p-benzoquinone in 20ml ethanol and stir for 30 minutes to obtain solution B;

[0030] 4) Mix solution A and solution B as an electrodeposition solution, and use a three-electrode method for electrodeposition, with FTO as a working electrode, Ag / AgCl as a reference electrode, and platinum wire as a counter electrode. Deposit at a constant potential of -0.4V vs (Ag / AgCl) for 5 minutes, and wash with deionized water to obtain a thin film elec...

Embodiment example 3

[0033] 1) Clean the conductive glass FTO (2cm*2cm), use detergent and water, deionized water, and acetone to ultrasonically clean for 10 minutes, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol) The mixed solution was ultrasonically cleaned for 60 minutes;

[0034] 2) Dissolve 0.1M bismuth nitrate pentahydrate and 0.2M potassium iodide in 50ml deionized water, and add 0.005M Ag + , 0.001M Pt 4+ , then add nitric acid to adjust the pH to 3, and stir evenly to obtain solution A;

[0035] 3) Dissolve 0.1M p-benzoquinone in 20ml ethanol and stir for 10 minutes to obtain solution B;

[0036] 4) Mix solution A and solution B as an electrodeposition solution, and use a three-electrode method for electrodeposition, with FTO as a working electrode, Ag / AgCl as a reference electrode, and platinum wire as a counter electrode. Deposit at a constant potential of 0.2V vs (Ag / AgCl) for 5 minutes, and wash with deionized water to obtain a thin film electrode;

...

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PUM

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Abstract

The invention discloses a preparation method of a biferroelectric bismuth ferrite / bismuth vanadatephotoelectrochemical film. The method comprises the following steps: 1) performing FTO pretreatment; 2) dissolving bismuth nitrate pentahydrate and potassium iodide in water, and adding metal salt ions and nitric acid to adjust the pH value; 3) dissolving p-benzoquinone in ethanol; 4) mixing the two,and performing electrochemical deposition to obtain a film electrode; and 5) dropwise adding dimethyl sulfoxide in which ferrous acetylacetonate and vanadylacetylacetonate are dissolved into the filmelectrode obtained in the step 4), and carrying out high-temperature heat treatment in a tubular furnace to obtain the biferroelectric doped bismuth ferrite / bismuth vanadatefilm. According to the preparation method of the biferroelectric bismuth ferrite / bismuth vanadatephotoelectrochemical film, the preparation method is simple and easy to implement, the requirement for the size and shape of a bottom electrode is low, the film is uniform in quality, large in specific surface area, accurate in stoichiometric ratio, excellent in photocatalytic performance and high in water photolysis efficiency,and doping modification research is easy to carry out.

Description

technical field [0001] The invention relates to a preparation method of a double ferroelectric bismuth ferrite / bismuth vanadate photoelectrochemical thin film. Background technique [0002] With the rapid development of social economy, energy shortage and environmental pollution are two thorny problems facing human society. Directly using solar energy to solve global energy and pollution problems has attracted more and more attention from human beings. Photoelectrochemical (PEC) water splitting to generate hydrogen and oxygen under sunlight irradiation is considered to be one of the most promising strategies to solve the energy and environmental crisis due to its high theoretical conversion efficiency and low cost. Among the existing semiconductors, the ferroelectric material BiVO 4 Attracting a lot of attention, BiVO with a band gap of 2.4eV 4 Due to its good photoelectrochemical properties, it is considered to be one of the promising PEC photoanode materials. However, c...

Claims

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Application Information

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IPC IPC(8): C03C17/00C03C17/25C25D9/04
CPCC03C17/006C03C17/25C25D9/04C03C2218/11Y02P20/133
Inventor 于濂清王艳坤赵兴雨张亚萍朱海丰
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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