IGBT module junction temperature online estimation circuit system and method

Abstract

The invention discloses an IGBT module junction temperature online estimation circuit system and method, and the method comprises the following steps: 1, carrying out the online measurement of the IGBT on-state voltage drop VCE(ON) of an IGBT power module, and building an IGBT junction temperature Tj lookup table; 2, calculating the power loss of an IGBT and a diode in the IGBT power module; 3, periodically and timely updating the IGBT equivalent thermal network model by adopting a thermal network updating strategy considering the fatigue accumulation effect of the solder layer; 4, establishing a state space model by taking the junction temperature Tj and the IGBT and diode power loss as state variables according to the IGBT equivalent thermal network model, and updating the state space model; and 5, designing an adaptive Kalman filtering algorithm program according to the state space model to obtain an IGBT junction temperature Tj estimated value. The method integrates the advantagesof model estimation and online measurement, overcomes the defect that on-state voltage drop VCE (ON) measurement is inaccurate, keeps signal continuity, reduces noise interference, is high in estimation precision, and can estimate the IGBT module junction temperature in real time in a non-intervention mode.

Description

technical field [0001] The invention relates to the technical field of reliability of key components of power electronics, in particular to an on-line estimation circuit system and method for the junction temperature of an IGBT module. Background technique [0002] At present, power electronic devices with IGBT modules as the core are widely used in motor control, electric vehicles, new energy, smart grid and other fields. In actual operation, the long-term complex power and temperature cycles of devices may lead to huge junction temperature and junction temperature fluctuations. Due to the inconsistency of the thermal expansion coefficient of each layer material in the semiconductor device, the fluctuation of the junction temperature causes the expansion degree of each layer to be different, resulting in thermal stress between the layers, resulting in fatigue aging of the solder layer or detachment of the bonding wire, resulting in electrical and thermal parameters of the d...

AI Technical Summary

Problems solved by technology

However, due to the low sensitivity of temperature-sensitive electrical parameters to junction temperature, measurement has certain errors, and is affected by the load conditions of power electronic equipment, it is difficult to directly use temperature-sensitive electrical parameters to estimate junction temperature

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