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Preparing method of carbon-autodoping carbon nitride photoelectricity thin film

A technology of photoelectric thin film and carbon nitride, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of large internal stress of the film, improve the crystallization quality, solve the problem of large internal stress, and improve the preparation process. simple effect

Inactive Publication Date: 2020-04-10
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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Problems solved by technology

[0004] The object of the present invention is to provide a kind of preparation method of carbon self-doping carbon nitride photoelectric thin film, this method only utilizes graphite as sputtering target material, can prepare carbon nitride thin film conveniently, improve the crystalline quality of thin film, and at the same time Solve the defect of large internal stress in the film

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Embodiment Construction

[0014] The invention provides a method for preparing a carbon self-doped carbon nitride photoelectric film, comprising the following steps:

[0015] a. Using a single crystal silicon wafer as the substrate, clean the substrate to remove the dirt on the surface of the substrate; use acetone, alcohol, deionized water and other ultrasonic cleaning to remove surface oil and impurities, and then dry it with hot air;

[0016] b. Place the cleaned substrate in the magnetron sputtering chamber, use graphite as the sputtering target, the graphite purity is 99.99%, use DC and RF coupled power supply, the working gas is Ar, and the reaction gas is N 2 , the power of DC power supply is 100W, the power of RF is 150W, the total working pressure is 1.5Pa, the total flow of Ar is 30sccm, N 2 The flow rate is 7 sccm, the sputtering time is 30 min, and a carbon nitride photoelectric thin film is deposited on the substrate surface.

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Abstract

The invention discloses a preparing method of a carbon-autodoping carbon nitride photoelectricity thin film. The preparing method comprises the following steps of a, adopting a monocrystalline siliconpiece as a substrate, cleaning the substrate, and removing dirt on the surface of the substrate; b, putting the substrate in a magnetron sputtering cavity, adopting graphite with the purity of 99.99%as a sputtering target material, adopting a direct current and radio frequency coupling power source, adopting Ar as working gas, adopting N2 as reaction gas, and then conducting deposition on the surface of the substrate to obtain the carbon nitride photoelectricity thin film. According to the preparing method, the carbon nitride thin film can be conveniently prepared by using only the graphiteas the sputtering target material, thus, the crystallization quality of the thin film is improved, and meanwhile, the defect of large internal stress of the thin film is overcome.

Description

technical field [0001] The invention relates to the technical field of carbon nitride film preparation, in particular to a method for preparing a carbon self-doped carbon nitride photoelectric film. Background technique [0002] Photocatalytic decomposition can convert sunlight into chemical energy. As an alternative method for sustainable energy that has attracted much attention, inorganic semiconductors are commonly used as electrode materials. However, although the efficiency of carbon-doped carbon nitride, that is, graphite-phase carbon nitride and its derivative compounds, is slightly lower than that of inorganic semiconductor materials, other advantages such as non-toxicity, cheapness, and suitable energy bands are unmatched by inorganic semiconductors. In recent years, it has been widely used as a photocatalytic electrode material. [0003] However, because carbon nitride is a late-synthesis product, the related research is not mature enough to understand its structu...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/0036C23C14/0605C23C14/0658C23C14/35
Inventor 沈洪雪李刚金克武王天齐
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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