Modeling method considering node voltage dynamic change in single event effect circuit simulation

Abstract

The invention relates to a modeling method considering node voltage dynamic change in single event effect circuit simulation. According to the method, the node voltage dynamic change condition in single event effect circuit simulation is described on the basis of a semi-physical-semi-analytical modeling thought, so that the single event effect sensitivity of the circuit is more reasonably and accurately predicted. The method mainly comprises the following steps: 1) constructing a sub-circuit model of the single event effect circuit; 2) acquiring current sources Iexp of different LET values anddifferent incident positions under the condition of connecting a constant bias voltage for the single tube; 3) calibrating by using a single-drive capability inverter to obtain a corresponding intermediate term fitting parameter frecomb and an output current source fitting parameter freal when heavy ions enter the N-type single-tube model and the P-type single-tube model; and 4) injecting the instantaneous current source modulated by the sub-circuit model into a working node in an actual circuit, and executing circuit simulation.

Description

technical field [0001] The invention relates to a single event effect simulation evaluation and reinforcement verification technology of a CMOS integrated circuit, in particular to a modeling method considering node voltage dynamic changes in single event effect circuit simulation. Background technique [0002] The single event effect of aerospace devices seriously affects the long-life and reliable operation of spacecraft in orbit. According to authoritative statistics, 45% of spacecraft on-orbit failures are caused by radiation damage, and single event effects account for more than 80% of radiation damage. Single event soft errors (single event upsets, single event transients) have become one of the important factors leading to on-orbit failures of spacecraft. [0003] Compared with the radiation test, the method of simulation analysis can predict the radiation resistance performance of the integrated circuit at the early stage of design, and then provide the basis for mo...

AI Technical Summary

Problems solved by technology

[0009] In order to solve the existing single event effect circuit simulation method, it is not considered that not all working nodes in the actual circuit are applied with the worst bias (PN junction reverse bias), and the voltage at the moment (ps level) of the electrical interference caused by radiation is Dynamic changes occur, thereby overestimating the technical problem of the total amount of injected charges. The present invention provides a modeling method considering the dynamic changes of node voltage in single event effect circuit simulation. The method is based on a semi-physical-semi-analytic modeling idea description sheet The dynamic change of node voltage in the particle effect circuit simulation, so that the sensitivity of the circuit single event effect can be predicted more reasonably and accurately

Images