Preparation device and application of silicon carbide single crystal

Abstract

The invention discloses a preparation device and application of a silicon carbide single crystal, and belongs to the field of preparation of single crystals. The preparation device of the silicon carbide single crystal comprises a crucible, a charging basket and a rotary lifting unit, the crucible comprises an upper crucible and a lower crucible; wherein the charging bucket comprises a bucket bodyand an opening part, the bucket body is arranged in the lower crucible, the opening part is rotatably connected with the upper crucible, and the charging bucket and the upper crucible form a growth cavity for preparing the silicon carbide single crystal by a physical vapor transport method; an isolation cavity is formed between the charging bucket and the lower crucible; the rotary lifting unit drives the charging bucket to rotate and lift relative to seed crystals. According to the preparation device, the charging bucket is accurately and stably located in the center of the crucible servingas a heating body in the rotary lifting process, the interior of the charging bucket is heated evenly due to the consistent temperature of the sections of the charging bucket in all directions, then the defects that carbon inclusions are generated in the prepared silicon carbide single crystal and the like are overcome, and the quality of the prepared silicon carbide single crystal is improved.

Description

technical field [0001] The application relates to a silicon carbide single crystal preparation device and its application, belonging to the field of single crystal preparation. Background technique [0002] Silicon carbide is one of the third-generation wide-bandgap semiconductor materials after silicon and gallium arsenide. Widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. High-quality crystals are the cornerstone of the development of semiconductor and information industries, and their preparation level restricts the preparation and performance of downstream devices. Although physical meteorological transport (PVT) growth of silicon carbide crystals has made great progress in recent years, the stability of the grown crystals still needs further study. For example, heat preservation and crucible loss lead to a decrease in the number of uses and fluctuations in the stability of the crystal growth. And the expansion of sili...

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Problems solved by technology

[0004] In order to solve the above problems, a silicon carbide single crystal preparation device and its application are provided. The charging barrel of the preparation device is accurately and stably positioned at the center of the crucible as a heating element during the process of rotating and lifting to obtain high-quality silicon carbide single crystal; the use method of the silicon carbide single crystal preparation device solves the blind spot in the prior art that the radial temperature in the crucible cannot be detected in real time during the crystal growth process; the silicon carbide single crystal prepared by the preparation method The quality of the crystal is high and there are few defects, especially high-quality silicon carbide single crystals larger than or equal to 6 inches can be produced

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