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Bulk acoustic wave resonator and semiconductor device

A bulk acoustic wave resonator and cavity technology, applied in electrical components, impedance networks, etc., can solve problems such as performance parameter decline, and achieve the effect of improving the acoustic impedance ratio, reducing loss, and making up for the reduction of Qsw.

Pending Publication Date: 2020-03-06
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

An increase in the electromechanical coupling coefficient of a resonator often leads to a decrease in other performance parameters

Method used

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  • Bulk acoustic wave resonator and semiconductor device
  • Bulk acoustic wave resonator and semiconductor device
  • Bulk acoustic wave resonator and semiconductor device

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Embodiment Construction

[0043] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0044] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0045] An embodiment of the present invention provides a bulk acoustic wave resonator, and the bulk acoustic wave resonator includes: a substrate and a multilayer structure. Wherein, a multilayer structure is formed on the substrate, and the multilayer structure includes a lower electrode layer, a doped piezoelectric layer and an upper electrode layer sequentially from bottom to top. A cavity is formed between the substra...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a doped piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the electrode surface of at least one of the lower electrode layer and the upper electrode layer is provided with aconcave part extending towards the interior of the corresponding electrode layer and / or a convex part extending towards the exterior of the corresponding electrode layer, the doped piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. According to the resonator, the cavity with the lower half cavity and the upper half cavity is arranged, the convex partand / or the concave part are / is arranged on the surface of the electrode layer, and the piezoelectric layer is doped with at least one rare earth element, so that a novel bulk acoustic wave resonatorstructure is formed, and the resonator has relatively good performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to bulk acoustic wave resonators and semiconductor devices. Background technique [0002] Resonators may be used in various electronic applications to implement signal processing functions, for example, some cellular telephones and other communication devices use resonators to implement filters for transmitted and / or received signals. Several different types of resonators are used depending on the application, such as Film Bulk Acoustic Resonator (FBAR), Filter of Coupled Resonators (SBAR), Stacked Bulk Acoustic Resonator (SBAR), Dual Bulk Acoustic Resonator ( DBAR) and Solid State Mounted Resonators (SMR). [0003] A typical acoustic resonator includes an upper electrode, a lower electrode, a piezoelectric material between the upper and lower electrodes, an acoustic reflective structure under the lower electrode, and a substrate under the acoustic reflective structure. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/17
CPCH03H9/02007H03H9/17
Inventor 李亮吕鑫梁东升刘青林马杰高渊丁现朋冯利东商庆杰钱丽勋李丽
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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