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SiC MOSFET active driving circuit capable of improving driving performance

A technology of active driving and driving current, applied in electrical components, electronic switches, climate sustainability, etc., can solve the problems of difficulty in taking into account switching losses, weak adaptability and reduced switching losses, etc., to achieve low switching losses, controllable The effect of fast response and low switching loss

Active Publication Date: 2020-02-25
HUNAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0014] Based on the above-mentioned technical defects, the present invention provides a SiC MOSFET active drive circuit with improved drive performance that overcomes the above-mentioned problems or at least partially solves the above-mentioned problems. Overvoltage / overcurrent and oscillation of the process, while controlling the switching loss of the switching process to reduce or not increase significantly, to solve the problems of difficult balance between voltage and current overshoot suppression and switching loss, weak adaptability, complex implementation, and slow control response Defects

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  • SiC MOSFET active driving circuit capable of improving driving performance
  • SiC MOSFET active driving circuit capable of improving driving performance
  • SiC MOSFET active driving circuit capable of improving driving performance

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Embodiment Construction

[0030] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0031] see figure 1 It can be seen that the turn-on process of SiC MOSFET can be divided into four stages, turn-on delay stage, current rising stage, voltage falling stage, and saturated conduction stage, such as figure 1 the t 0 -t 4 As shown, the driving current waveform of the traditional driving circuit in the switching process is as follows figure 1 Middle I g1 As shown, the waveforms of drain current and drain-source voltage during switching are as follows figure 1 Middle I d , V ds shown. The ideal SiC MOSFET conduction process has a large gate drive current I during the conduction delay phase G , to shorten the conduction time; reduce the driving current i...

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Abstract

The invention discloses a SiC MOSFET active driving circuit with improved driving performance. The instantaneous change states of the drain current ID and the drain-source voltage Vds are introduced to judge the switching process state of the SiC MOSFET; an opening process detection judgment signal and a closing process detection judgment signal which are used as intermediate quantities are obtained through logic judgment; finally, a driving current injection control circuit and a driving current shunt circuit are controlled; driving current Ig2 or shunt driving current Ig3 is injected in different stages; the driving current Ig1 output by the main driving circuit is matched to obtain the control effect of the driving current IG of various gates, so that the switching loss is not increasedwhile the voltage and current overshoot is inhibited according to the active driving circuit disclosed in the invention, and the switching speed of the SiC MOSFET is basically not influenced.

Description

technical field [0001] The invention relates to the technical field of power electronics, and more specifically relates to a SiC MOSFET active drive circuit with improved drive performance. Background technique [0002] As a promising wide-bandgap semiconductor device, SiC MOSFET has the advantages of high switching speed, low on-resistance, and high thermal conductivity, which can greatly reduce the volume of components such as inductors, capacitors, and heat sinks, and can greatly reduce The size, weight and cost of small power electronics devices greatly improve the performance of the system. Although SiC MOSFETs have several advantages, their high switching speed also brings many problems. The extremely fast switching speed of SiC MOSFET is very sensitive to the parasitic parameters caused by packaging, wiring and application circuit and the junction capacitance of the device itself. In the application of high voltage and high switching speed, high dv / dt and di / dt, due...

Claims

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Application Information

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IPC IPC(8): H02M1/088H03K17/687
CPCH02M1/088H03K17/687H02M1/0038H02M1/0054Y02B70/10
Inventor 刘平李海鹏黄守道陈梓健陈常乐
Owner HUNAN UNIV
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