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Substrate-integrated waveguide equalizer

A substrate-integrated waveguide and equalizer technology, applied in the microwave field, can solve uncommon problems

Active Publication Date: 2020-02-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
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Problems solved by technology

Reports of SIW-based equalizers are uncommon, and SIW equalizers used in mmWave bands have not been reported

Method used

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Embodiment Construction

[0028] The present invention will be further described in detail below in conjunction with the accompanying drawings and examples.

[0029] Since the EM field distribution characteristics in SIW and Rectangular Waveguide (RW) are similar, for simplicity, the equalizer in RW is analyzed first. The distribution of the surface resistance of the side wall of the equalizer body is as follows: image 3 , can be divided into two parts: Area 1 and Areas 2 and 3.

[0030] The amplitude of the electric field is along the +z direction, and the attenuation constant in RW is assumed to be α, which propagates in the form of waves, which can be expressed as

[0031] E=E 0 e -αz (1)

[0032] The transmission power can be expressed as

[0033] P=P 0 e -2αz (2)

[0034] The power loss per unit length is

[0035]

[0036]

[0037]

[0038]

[0039] where R s , R s ', Js, and Respectively represent the surface resistance of the metal in the RW, the surface resistance in...

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Abstract

The invention relates to a microwave circuit technology, in particular to a substrate-integrated waveguide equalizer. Two grooves penetrating through a metal layer are formed in an SIW body at equal intervals along an electromagnetic propagation direction, an energy consumption original piece-resistance thin film is introduced, and the loss of a propagation channel is increased; and when an electromagnetic wave is propagated in the SIW body in a TE1.0 mode, a signal can be attenuated to a certain extent as well as the TE1.0 mode is propagated in surface resistance film, and the attenuation isclosely related to a working frequency. The surface resistance of a side wall part of the SIW body can be divided into two parts comprising a first region, a second region and a third region, the insertion loss difference between a high-frequency point and a low-frequency point can be increased with increase of k at the first region, and the insertion loss difference between the high-frequency point and the low-frequency point can become small with increase of k at the second region and the third region. The SIW equalizer structure can be used in micro-wave or millimeter-wave circuit and system, and different attenuation is performed on signals at different frequencies.

Description

technical field [0001] The invention relates to microwave technology, in particular to a substrate integrated waveguide (Substrate Integrated Waveguide, SIW) equalizer. Background technique [0002] As a new type of transmission line structure, Substrate Integrated Waveguide (SIW) has been widely used in microwave and millimeter wave circuits. It has the advantages of low loss, excellent microwave performance, and easy integration. [0003] Equalizers are an essential part of RF, microwave, and mmWave circuits and systems. For most active and passive devices or circuits, with the increase of frequency, the trend of decreasing gain or increasing insertion loss is objective. Existing equalizer theories are mainly based on resonant circuits, which means that the equalizer design method and process are similar to filter design. In this patent, however, a novel SIW-based equalizer will be proposed. [0004] As far as we know, there are mainly two types of existing equalizers: ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
CPCH01P1/222
Inventor 彭浩吴源浩赵发举刘宇周翼鸿杨涛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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