Millimeter wave frequency band amplifier chip packaging structure and manufacturing method thereof
A chip packaging structure, millimeter-wave frequency band technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of high loss of millimeter-wave amplifiers, difficulty in exerting superior performance, etc., to shorten the connection length and improve the performance. Its own RF performance and the effect of reducing parasitic inductance
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[0030] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0031] Please also refer to Figure 1 to Figure 7 Now, the packaging structure of the millimeter wave amplifier chip provided by the present invention and the method for manufacturing the packaging structure will be described. It includes a chip 100, a packaging substrate and a cover 300; several chip DC ports 120 and two chip RF ports 110 are provided on the upper surface of the chip 100; layer 210 , first dielectric layer 240 , second metal layer 220 , second dielectric layer 250 and third metal layer 230 . The middle part of the first metal layer 210 and the f...
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