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Surface Wave Suppression Method on Temperature Compensation Layer of Temperature Compensation Surface Acoustic Wave Device

A surface acoustic wave device, temperature compensation technology, applied in the direction of electrical components, impedance network, etc., can solve the problem of deteriorating the electrical performance index of the device, and achieve the effect of improving the electrical performance index

Active Publication Date: 2022-04-01
CETC CHIPS TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to solve the problem that the surface acoustic wave on the free upper surface of the existing TCSAW device will deteriorate the electrical performance index of the device after being superimposed into the electrical performance of the device, and to provide a temperature-compensated surface acoustic wave The surface wave suppression method on the upper surface layer of the temperature compensation layer of the device can effectively suppress the acoustic wave on the upper surface layer of the temperature compensation layer of the TCSAW device, thereby improving the electrical performance index of the TCSAW

Method used

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  • Surface Wave Suppression Method on Temperature Compensation Layer of Temperature Compensation Surface Acoustic Wave Device
  • Surface Wave Suppression Method on Temperature Compensation Layer of Temperature Compensation Surface Acoustic Wave Device

Examples

Experimental program
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Effect test

Embodiment 1

[0042] Embodiment 1: see Figure 1 to Figure 3 , a method for suppressing surface waves on a temperature-compensated layer of a temperature-compensated surface acoustic wave device, comprising the steps of:

[0043] 1) Cleaning the wafer 1; cleaning the wafer 1 with the existing conventional cleaning technology; wherein, the wafer 1 adopts a lithium tantalate single crystal or a lithium niobate single crystal piezoelectric wafer 1, so as to manufacture a temperature-compensated acoustic surface wave devices.

[0044] 2) Fabricate the metal chip 2 (metal interdigitated layer) of the surface acoustic wave device on the device surface of the wafer 1; in actual production, use the wet (including stripping) process technology route and the dry etching route to complete the production. It is a mature existing technology.

[0045] 3) Fabricate a temperature compensation layer 3 on the metal surface of the metal chip 2; the temperature compensation layer 3 uses silicon dioxide, fluo...

Embodiment 2

[0051] Example 2, see Figure 8 to Figure 11 , the difference from Example 1 is that in step 4),

[0052] a) First use a dicing machine (grinding wheel or laser, etc.) or dry etching to make grooves 5 on the surface of the temperature compensation layer 3 on the surface of the acoustic channel, wherein the grooves 5 are single grooves 5 or dense grooves 5; when opening When the groove 5 is a single groove 5, the groove 5 is located between the input and output ends of the surface acoustic wave device. When the groove 5 is a dense groove 5, the density is 0.1 to 100 times the propagation wavelength of the upper surface.

[0053] b) Then, on the upper surface of the temperature compensation layer 3, the sound-absorbing glue 4 with a thickness of 10nm to 100nm is fully coated on the surface of the acoustic channel by means of screen glue, glue dispenser glue, or glue spray machine spray glue; Glue 4 fills up slot 5 . During the production process, according to the set thickness...

Embodiment 3

[0054] Example 3, see Figure 12 , 13 , the difference from Examples 1 and 2 is that in step 4),

[0055] a) First use a dicing machine (grinding wheel or laser, etc.) or dry etching to make grooves 5 on the surface of the temperature compensation layer 3 on the surface of the acoustic channel, wherein the grooves 5 are single grooves 5 or dense grooves 5; when opening When the groove 5 is a single groove 5, the groove 5 is located between the input and output ends of the surface acoustic wave device. When the groove 5 is a dense groove 5, the density is 0.1 to 100 times the propagation wavelength of the upper surface.

[0056] b) Then, in the groove 5 on the upper surface of the temperature compensation layer 3, the sound-absorbing glue 4 with a thickness of 10nm to 100nm is coated by screen glue, glue dispenser glue or glue spraying machine spray glue, and the sound-absorbing glue 4 will The groove 5 is filled and its upper side protrudes beyond the temperature compensatio...

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Abstract

The invention discloses a method for suppressing a surface wave on a temperature-compensated layer of a temperature-compensated surface acoustic wave device, comprising the following steps: 1) cleaning a wafer; 2) manufacturing a metal chip of a surface acoustic wave device on the device surface of the wafer; 3) Make a temperature compensation layer on the metal surface of the metal chip; 4) Groove the temperature compensation layer and apply sound-absorbing glue. The invention can effectively block the propagation path of the surface wave on the upper surface of the temperature compensation layer, absorb the surface wave on the upper surface of the temperature compensation layer, and improve the electrical performance index of the TCSAW.

Description

technical field [0001] The invention relates to the technical field of surface acoustic wave device processing, in particular to a method for suppressing surface waves on a temperature-compensated surface layer of a temperature-compensated surface acoustic wave (TCSAW) device. Background technique [0002] Surface acoustic wave (SAW) devices are widely used in various types of communication. In future communication applications, in order to adapt to various harsher external environments, it is urgent to improve the working stability of SAW devices. Temperature is one of the important parameters affecting the working stability of SAW devices. In the manufacturing process of SAW devices, once the device is packaged, its state is determined. However, as the external temperature changes, many parameters of the surface acoustic wave device, such as the thickness, width, and elastic coefficient of the fingers and the substrate, will change accordingly, and the wave velocity and f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H3/10
CPCH03H9/02834H03H9/02559H03H3/10
Inventor 董加和冷俊林陆川
Owner CETC CHIPS TECH GRP CO LTD
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