Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro device transfer device and micro device transfer method

A technology for micro-devices and transfer devices, which is applied in the manufacturing of semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve problems such as breakage, and achieve the effect of improving uneven force and avoiding damage.

Active Publication Date: 2022-04-12
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the brittle characteristics of micro-devices, especially Micro-LEDs, it is easy to be damaged by force during the transfer process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro device transfer device and micro device transfer method
  • Micro device transfer device and micro device transfer method
  • Micro device transfer device and micro device transfer method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] figure 1 is a schematic structural diagram of the transfer device 100 of the first embodiment. The transfer device 100 can be used for transferring microdevices 13 . Such as figure 1 As shown, the transfer device 100 includes a first substrate 11 . At least one well 110 is opened on a surface of the first substrate 11 . In this embodiment, a plurality of wells 110 are opened on a surface of the first substrate 11 , three wells 110 are shown in the figure. Each well 110 includes a first bottom surface 111. In this embodiment, the first bottom surface 111 is rectangular, but not limited thereto, and the shape of the first bottom surface is not limited. Each well also includes a first side wall 112 extending from four sides of the first bottom surface 111 toward the wellhead, and the first bottom surface 111 serves as a bearing surface. The first bottom surface 111 of each well is basically at the same height relative to the same horizontal plane or at slightly differ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a transfer device for a micro device, comprising: a first base; a transfer base, the transfer base is formed on the first base, and the transfer base is used to carry a plurality of micro devices; the first base At least one cushioning element is also included between the transfer substrate and the transfer substrate. The transfer device of the micro device of the present invention can provide a buffer force when transferring the micro device, so as to prevent the micro device from being damaged.

Description

technical field [0001] The invention relates to a micro-device transfer device and a micro-device transfer method. Background technique [0002] Generally, the industry uses transfer printing to form micro devices, such as micro-semiconductor light-emitting diodes (Micro-LEDs), on a receiving substrate, such as an active array substrate, to realize the integration of the micro device and the receiving substrate. For the Micro-LED device as a display device, the micro-semiconductor light-emitting diodes are usually formed on the active matrix substrate by means of transfer printing, so as to realize the purpose of image display by controlling the light emission of the micro-semiconductor light-emitting diodes themselves. However, due to the brittle characteristics of micro-devices, especially Micro-LEDs, they are easily damaged due to force during the transfer process. Contents of the invention [0003] In view of this, it is necessary to provide a transfer device for micr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L33/48
CPCH01L21/67144H01L33/48H01L2933/0033H01L21/6835H01L2221/68313H01L2221/68363H01L2221/68318H01L33/0095H01L33/20H01L25/0753H01L33/62H01L2933/0066H01L2221/68354B65G47/74
Inventor 张炜炽林金源陈英杰陆一民吴逸蔚
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com