Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trichlorosilane impurity removal method, polycrystalline silicon material and trichlorosilane impurity removal system

A technology of trichlorosilane and fillers, applied in chemical instruments and methods, silicon compounds, halosilanes, etc., can solve problems such as difficult removal of trichlorosilane impurities

Active Publication Date: 2020-01-07
ASIA SILICON QINGHAI +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, it is difficult to deeply remove the impurities in trichlorosilane produced by the improved Siemens method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trichlorosilane impurity removal method, polycrystalline silicon material and trichlorosilane impurity removal system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The trichlorosilane raw material containing dimethyl monochlorosilane to be removed is passed through the first filter 300 to remove solid phase impurities.

[0062] Then pass through the heater 200 to heat the trichlorosilane to be removed to 200°C.

[0063] The heated trichlorosilane is passed into the metal impurity removal reactor 100 filled with platinum (Pt) with an average particle diameter of 1.5mm as the metal impurity removal filler, and the metal is removed by the electric heating tube 123 in the metal impurity removal reaction. The trichlorosilane in the impurity reactor 100 is heated to 500° C., and the pressure of the raw material to be removed is 1 MPa.

[0064] The tail gas reacted in the metal impurity removal reactor 100 is passed into the cooler 400. The tube side medium of the cooler 400 is the reaction tail gas, and the shell side medium is silicon tetrachloride, and the tail gas is cooled to 100°C.

[0065] The cooled tail gas is passed into the r...

Embodiment 2

[0068] The trichlorosilane raw material containing dimethyl monochlorosilane to be removed is passed through the first filter 300 to remove solid phase impurities.

[0069] Then pass through the heater 200 to heat the trichlorosilane to be removed to 600°C.

[0070] The heated trichlorosilane is fed into the metal impurity removal reactor 100 filled with gold (Au), nickel (Ni) and cobalt (Co) with an average particle diameter of 0.1mm as the metal impurity removal filler, and the metal impurity removal The electric heating tube 123 in the reaction heats the trichlorosilane in the metal impurity removal reactor 100 to 600° C., and the pressure of the raw material to be removed is 10 MPa.

[0071] The tail gas reacted in the metal impurity removal reactor 100 is passed into the cooler 400. The tube side medium of the cooler 400 is the reaction tail gas, and the shell side medium is silicon tetrachloride, and the tail gas is cooled to 200°C.

[0072] The cooled tail gas is passe...

Embodiment 3

[0075] The trichlorosilane raw material containing dimethyl monochlorosilane to be removed is passed through the first filter 300 to remove solid phase impurities.

[0076] Then pass through the heater 200 to heat the trichlorosilane to be removed to 100°C.

[0077] The heated trichlorosilane is fed into the metal impurity removal reactor 100 filled with ruthenium (Ru), palladium (Pd) and zirconium (Zr) with an average particle diameter of 2mm as the metal impurity removal filler, and the metal impurity removal reaction The electric heating tube 123 inside heats the trichlorosilane in the metal impurity removal reactor 100 to 300° C., and the pressure of the raw material to be removed is 0.1 MPa.

[0078] The tail gas reacted in the metal impurity removal reactor 100 is passed into the cooler 400. The tube side medium of the cooler 400 is the reaction tail gas, and the shell side medium is silicon tetrachloride, and the tail gas is cooled to 40°C.

[0079] The cooled tail gas...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of semiconductors, and in particular relates to a trichlorosilane impurity removal method, a polycrystalline silicon material and a trichlorosilane impurity removalsystem. The trichlorosilane impurity removal method comprises the following steps: carrying out impurity removal adsorption on hot trichlorosilane by using a metal impurity removal filler; the trichlorosilane impurity removal system comprises a metal impurity removal reactor and a heater communicated with a gas inlet of the metal impurity removal reactor, and a metal impurity removal filler is contained in the metal impurity removal reactor. According to the trichlorosilane impurity removal method and the trichlorosilane impurity removal system provided by the invention, impurities in trichlorosilane can be deeply removed, so that trichlorosilane with extremely low carbon content is prepared.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for removing impurities from trichlorosilane, a polysilicon material and a system for removing impurities from trichlorosilane. Background technique [0002] High-purity polysilicon is the basic material for semiconductor devices and high-efficiency photovoltaic cells. At present, related technologies are usually produced by the improved Siemens process. [0003] However, it is difficult to deeply remove impurities in trichlorosilane by the improved Siemens method. Contents of the invention [0004] The first object of the present invention is to provide a method for removing impurities in trichlorosilane, which can deeply remove impurities in trichlorosilane. [0005] A second object of the present invention is to provide a polysilicon material in which the impurity content of trichlorosilicon is extremely low. [0006] The third object of the present invention is to p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/027C01B33/107
CPCC01B33/027C01B33/10784
Inventor 王体虎张宝顺宗冰
Owner ASIA SILICON QINGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com