Switching circuit

Abstract

A switching circuit comprises a switch and a potential translation circuit, wherein the switch comprises a conduction endpoint and an input endpoint; the input endpoint is used for receiving an inputvoltage, and a conduction voltage on the conduction endpoint controls the conduction state of the switch; the potential translation circuit comprises a potential input endpoint and a potential outputendpoint; the potential input endpoint is coupled to the input endpoint to receive the input voltage; the potential translation circuit is used for translating the input voltage to generate a translation voltage at the potential output endpoint; and the conduction voltage is determined by the translation voltage.

Description

technical field [0001] The invention relates to a switch circuit, especially a circuit with high linearity, suitable for negative voltage operation and high power output audio products. Background technique [0002] Traditional analog switches are usually implemented with transmission gates, using the parallel connection of P-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and N-type Metal Oxide Semiconductor Field Effect Transistors to reduce etc. Effective impedance, and at the same time increase the linearity, but unless a considerable area cost is paid, the specifications achieved are still not enough for audio products, and because the source and base of the metal oxide semiconductor field effect transistor will be connected together, once If the input voltage is a negative voltage, the base of the P-type metal-oxide-semiconductor field-effect transistor will conduct with the P-substrate (P-substrate) to cause leakage current. Therefore, the switching ...

AI Technical Summary

Problems solved by technology

[0002] Traditional analog switches are usually implemented with transmission gates, using the parallel connection of P-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and N-type Metal Oxide Semiconductor Field Effect Transistors to reduce etc. Effective impedance, and at the same time increase the linearity, but unless a considerable area cost is paid, the specifications achieved are still not enough for audio products, and because the source and base of the metal oxide semiconductor field effect transistor will be connected together, once If the input voltage is a negative voltage, the base of the P-type metal-oxide-semiconductor field-effect transistor will conduct with the P-substrate (P-substrate) to cause leakage current. Therefore, the switching circuit implemented by the transmission gate is not suitable. For example, the use of ground reference (ground reference) headphone amplifier (headphone amplifier, HP_AMP) and other products, and this is the structure often used in audio products at present, to save the cost of parts

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