Flexible gradient strain film, preparation method and application thereof
A strained film and gradient technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of small test space, insufficient placement of tensile fixtures, and inability to have different tensile strains, and achieves a simple preparation process. Easy to use and resource-saving effect
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[0029] A preparation method for a flexible gradient strain film, comprising the following steps:
[0030] Step 1. Use AZ6112 positive resist as a mask, photolithography exposure time 3.5s, development 45s, prepare two isosceles trapezoidal patterns on the surface of the SOI substrate, the two isosceles trapezoids are isosceles trapezoids symmetrical about the upper base , and the two isosceles trapezoids have the same upper base, the upper base b of the structure is 0.080mm long, the lower base a is 0.252mm long, and the height 0.5c of the trapezoid is 0.7165mm;
[0031] Step 2. Use SF 6 with O 2 The mixed gas is used to plasma etch the silicon thin film layer of the SOI substrate, the RIE power is 100W, and the etching time is 60s;
[0032] Step 3. Put the SOI substrate patterned in step 2 into an HF solution with a mass fraction of 40% for etching. After etching, the cured PDMS stamp is closely attached to the SOI substrate and the stamp is lifted, that is The top silicon...
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