III-nitride transistor epitaxial structure and transistor device

Abstract

The invention discloses an III-nitride transistor epitaxial structure comprising a substrate and a nucleation layer, a buffer layer, a channel layer and a barrier layer, which are sequentially stackedon the substrate, wherein the substrate comprises a plurality of groove structures and a growth window located among the groove structures; the nucleation layer is located in the growth window of thesubstrate; the buffer layer comprises a semi-polar III-nitride that is formed in a merging region and epitaxially grows along the direction of the growth window and the direction of the adjacent groove structure and a semi-polar III-nitride that is formed in the window region and epitaxially grows along the direction perpendicular to the plane where the substrate is located; the channel layer andthe barrier layer are both semi-polar III-nitrides, and the merged region and the window region both extend to the channel layer and the barrier layer. The III-nitride transistor epitaxial structurefacilitates the fabrication of enhanced HEMT devices with high electron mobility and low lateral leakage.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor materials and device manufacturing, and in particular to a III-nitride transistor epitaxial structure and a transistor device. Background technique [0002] Group III nitrides such as AlN, GaN, InN and their ternary and quaternary compounds are direct band gap compound semiconductor materials, which have wide band gap, high breakdown electric field and thermal conductivity, high electron mobility and chemical corrosion resistance, etc. Features, can fully meet the market demand for high-voltage conversion devices. [0003] At present, the GaN-based HEMT (High Electron Mobility Transistor, high electron mobility transistor) structure is mainly a c-plane polar material obtained by epitaxial growth on c-plane sapphire and (111)-plane Si substrates. It has strong spontaneous polarization and piezoelectric polarization along the growth direction, forming a large concentration of pola...

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Problems solved by technology

However, the threshold voltage of enhanced HEMT devices obtained by these methods is usually low, and the process steps are complicated, and the reliability still needs to be improved, which is not suitable for a wide range of production and applications.

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