Planar gate device structure having high switching speed and manufacturing method thereof

Abstract

The invention discloses a planar gate device structure having a high switching speed and a manufacturing method thereof. The planar gate device structure comprises a semiconductor substrate or an epitaxial layer, and a set of planar gates are arranged on the semiconductor substrate or the epitaxial layer, each planar gate comprises a first gate electrode insulation layer arranged at the middle position, a second gate electrode insulation layer extended from the first gate electrode insulation layer to the two sides, and a gate electrode arranged on the first gate electrode insulation layer andthe second gate electrode insulation layer, wherein the thickness of the first gate electrode insulation layer is larger than the thickness of the second gate electrode insulation layer. The manufacturing method of the planar gate is simple and easy to achieve, the device having the planar gate structure has lower gate and drain capacitance, the faster switching speed and the lower switching loss, and can be widely applied to the power semiconductor device fields such as MOSFET, IGBT and MCT.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a planar gate device structure with high switching speed and a manufacturing method thereof. Background technique [0002] The planar gate structure is often used in high withstand voltage power semiconductor devices, especially in power semiconductor devices with MOS structures such as MOSFETs, IGBTs, and MCTs. Compared with devices with traditional bipolar structure, devices with MOS structure are known for their high switching speed, and are mainly used in high-speed switching circuits. The large or small parasitic capacitance of the device directly affects the slow or fast switching speed of the device, and also affects the high or low switching power consumption of the device. In a common planar gate structure power semiconductor device, there is only one gate electrode insulating layer under the gate electrode, which corresponds to the second gate electrode insul...

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Problems solved by technology

[0003] One of the purposes of the present invention is to provide a planar gate device structure with high switching speed, which solves the problems of further reducing parasitic capacitance, increasing switching speed and reducing switching power consumption in existing devices

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