Novel high-frequency high-voltage silicon stack circuit

Abstract

The invention relates to a novel high-frequency high-voltage silicon stack circuit, which comprises rectifier diode modules formed in a way that a plurality of rectifier diodes are connected in series, wherein a plurality of rectifier diode modules form a full-bridge rectifying circuit; two ends of each rectifier diode are provided with forward-connection one-way transient suppression diodes or bidirectional transient suppression diodes in parallel; and the clamp voltage of each transient suppression diode is smaller than the maximum backward voltage of each rectifier diode and is greater thanthe working voltage of each rectifier diode. The high-voltage silicon stack circuit can independently effectively protect a plurality of rectifier diodes integrated in a high-voltage silicon stack, the backward voltage of two ends of each rectifier diode is clamped in a safe range, the impact resistance capability of the rectifier diode is enhanced, the reverse breakdown of the rectifier diode isavoided, and a situation that the high-voltage silicon stack is broken and fails due to voltage-sharing unbalance among the plurality of rectifier diodes can be avoided.

Description

technical field [0001] The invention relates to the field of high-frequency and high-voltage dust removal power supplies, in particular to a novel high-frequency and high-voltage silicon stack circuit. Background technique [0002] In the field of electrostatic dust removal (hereinafter referred to as ESP), the dust removal power supply generates DC high voltage to ionize the air, and the dust is charged through microscopic collisions, and the electrostatic adsorption between the charged dust and the plate achieves the purpose of dust removal. Among them, the high-voltage silicon stack is an important part of the high-frequency high-voltage dust removal power supply. Because the output voltage is as high as dozens or even hundreds of kV, multiple high-frequency rectifier diodes need to be connected in series. In this case, it is necessary to ensure that the equipment can work reliably. [0003] The traditional silicon rectifier stack is realized by a full-bridge rectificat...

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Problems solved by technology

Due to the excessive number of rectifier diodes, it often leads to insulation failure caused by insufficient creepage distance and oil insulation distance. Of course, this situation can be solved by excellent structure and electrical design; the more serious hidden danger is multiple rectifier diodes In series, the voltage equalization of the rectifier diodes cannot be guaranteed, resulting in the collapse of all rectifier diodes and equipment failure

[0004] The rectifier diodes operate in series, and will not cause damage due to voltage equalization problems in the steady state process; but in the dynamic process from forward to reverse, due to the different parameters of each rectifier diode, especially the reverse recovery time different, resulting in severe unbalanced rectifier diode voltage and lead to rectifier diode breakdown damage

Due to the inconsistency of rectifier diode parameters, the reverse recovery time is short in actual products, and the same batch of products can largely avoid the voltage breakdown problem of rectifier diodes, but this cannot fundamentally and effectively solve this problem

[0005] Traditionally, an RC circuit connected in parallel at both ends of each series rectifier diode can be used to absorb peaks. Because the RC circuit is deeply involved in the operation of the circuit, the inherent parameters of the RC circuit are inconsistent, and the high-frequency and high-voltage working environment requires capacitance. Higher, etc., cannot guarantee effective protection of rectifier diodes in series

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