Hybrid gate driving circuit

Abstract

The invention relates to a hybrid gate driving circuit. The hybrid gate driving circuit is characterized in that a first Darlington tube is connected between a power voltage and an output end of a gate driving circuit and is controlled by a first Darlington tube control module; a second Darlington tube is connected between the output end of the gate driving circuit and the ground and is controlledby a second Darlington tube control module; a gate of a first PMOS tube is connected with a first control signal, a source is connected with the power voltage, and a drain is connected with a drain of a first NMOS tube and the output end of the gate driving circuit; a gate of the first NMOS tube is connected with a second control signal, and a source is grounded. The hybrid gate driving circuit is advantaged in that after a power tube is started, the second Darlington tube and the first NMOS tube are turned off, firstly, a power tube gate is charged to the power voltage by the first Darlington tube to reduce the minimum operating voltage of the Darlington tube, and charging continues to the power voltage by the first PMOS tube; when the power tube is turned off, the first Darlington tubeand the first PMOS tube are turned off, the power tube gate is first discharged by the second Darlington tube to the minimum operating voltage of the Darlington tube, and discharge continues to the ground by the first NMOS tube.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to a hybrid gate drive circuit. Background technique [0002] In electronic circuits, the gate drive circuit is an important circuit. The function of the gate drive circuit is to drive the power transistor to turn on and off, and to maintain the on or off state of the power transistor when it is turned on and off in a steady state. The gate drive circuit is widely used in analog circuits. Since the switching speed of the power tube is directly related to the dv / dt experienced by the power during transient switching, in some applications that are sensitive to dv / dt effects (such as AC-DC converters), it is necessary to control the power tube The opening speed to achieve the purpose of reducing the size of dv / dt. [0003] Existing gate driving methods usually use triode or field effect transistor alone to drive. As a flow control device, triode can effectivel...

AI Technical Summary

Problems solved by technology

[0003] Existing gate driving methods usually use triode or field effect transistor alone to drive. As a flow control device, triode can effectively control the charging and discharging speed of the power tube gate. However, due to the existence of built-in potential of triode, it often leads to The follow-up process is too long and not suitable for high-speed application requirements

The driving of field effect transistors (MOSFETs) can avoid this problem, but its driving speed is often uncontrollable

Therefore, the existing gate driving methods cannot meet the requirements for slope control and driving speed at the same time.

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