In situ modification method of electronic grade spherical packing

Abstract

The invention discloses an in situ modification method of electronic grade spherical packing. The in situ modification method comprises the steps that spherical packing with the average particle sizeD50 between 0.01 [mu]m and 60 [mu]m is selected, the spherical packing is led into a reaction vessel, igniting and spheroidization are conducted, cooling is conducted after spheroidization, when the temperature is cooled to 80 DEG C to 150 DEG C, a coupling agent is added into the spherical packing after spheroidization, the additive amount of the coupling agent accounts for 0.1% to 2% of the total weight of the spherical packing, and thus the spherical packing after modified in situ is prepared; and the coupling agent is one or more of hexamethyldisiloxane, polysiloxane, dihydroxydimethylsilane and a silane coupling agent. According to the in situ modification method, in the spheroidization and cooling processes of the spherical packing, the coupling agent is adopted to modify the spherical packing in situ by using residual heat, and thus the spherical inorganic packing modified in situ has excellent hydrophobic performance, good particle dispersion and excellent compatibility and binding force with organic resin.

Description

technical field [0001] The invention belongs to the technical field of deep processing of inorganic non-metallic materials, and in particular relates to an in-situ modification method of electronic-grade spherical fillers. Background technique [0002] Inorganic fillers are used in resin systems and are widely used in industries such as epoxy molding compounds, coatings, adhesives and inks. However, in the process of use, there will be problems of compatibility and bonding between inorganic fillers and organic resins, especially when the filling amount of inorganic fillers reaches a certain level, the more obvious the defects will be. [0003] The prior art discloses an invention patent whose application number is 200810024250.3 and which is called electronic-grade ultrafine silicon powder dry method surface modification method. The method uses ultrafine silicon powder as raw material and modified mixed solution as modifier to prepare Modified products, the disadvantage is ...

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Problems solved by technology

However, in the process of use, there will be problems of compatibility and bonding between inorganic fillers and organic resins, especially when the filling amount of inorganic fillers reaches a certain level, the more obvious the defects will be.

[0003] The prior art discloses an invention patent whose application number is 200810024250.3 and which is called electronic-grade ultrafine silicon powder dry method surface modification method. The method uses ultrafine silicon powder as raw material and modified mixed solution as modifier to prepare Modified products, the disadvantage is intermittent, increased modification process and polluted products;

[0004] The prior art discloses another invention patent with the application number 201010595909.8 and the name of the method for synthesizing hydrophobic nano-silica particles by combustion method. This method uses organic precursors as raw materials and uses combustion method to synthesize hydrophobic nano-silica particles. The particle method is used to prepare in-situ modified hydrophobic nano-silica. The disadvantage is that organic precursors are used as raw materials, the materials are expensive, and the cost is high. The product can only be nano-sized particles, and no micron-sized modified products can be produced;

[0005] The prior art also discloses an invention patent with the application number 201310599168.4 and the name of the preparation method of mechanochemically modified silicon micropowder. The method uses quartz sand as raw material and adopts mechanochemical method to produce micron-scale modified products. However, the spherical filler cannot be mechanically ground, otherwise the spherical particles will be broken and cracked by grinding, resulting in spherical particle defects

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