Wafer structure, manufacturing method and chip structure

A chip structure and manufacturing method technology, applied to radiation control devices, electrical components, diodes, etc., can solve the problems of complex manufacturing process and high manufacturing cost, and achieve the effects of simple structure, reduced manufacturing process complexity, and high integration

Inactive Publication Date: 2019-10-22
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

[0002] With the continuous development of semiconductor technology, CMOS image sensor (CMOS Image Sensor, CIS) has also been greatly developed. Stacked CIS is the current high-end product, which uses bonding technology to stack image sensor chips and image signal processing chips. Bonded together, it has the advantages of high performance, low cost and high integration, but there are problems of complex manufacturing process and high manufacturing cost

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  • Wafer structure, manufacturing method and chip structure
  • Wafer structure, manufacturing method and chip structure
  • Wafer structure, manufacturing method and chip structure

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Embodiment Construction

[0045] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0046] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0047] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The invention provides a wafer structure, a manufacturing method thereof and a chip structure. The manufacturing method comprises the steps of bonding the front of a first chip with a photosensitive unit array and the front of a second chip with a logic device; arranging an electric connection through hole in a pad area at the back of the first chip, wherein the electric connection through hole passes through a top connecting line layer in the first chip from the back of the first chip and penetrates to a top connecting line layer in the second chip; and arranging a pad on the electric connection through hole. Therefore, the embodiment of the invention realizes the integration of the stacked photosensitive device, has the advantages of high integration degree and simple structure, can effectively improve the transmission efficiency of the device and reduces the complexity of the manufacturing process.

Description

technical field [0001] The invention relates to the field of semiconductor devices and their manufacture, in particular to a wafer structure, its manufacturing method, and a chip structure. Background technique [0002] With the continuous development of semiconductor technology, CMOS image sensor (CMOS Image Sensor, CIS) has also been greatly developed. Stacked CIS is the current high-end product, which uses bonding technology to stack image sensor chips and image signal processing chips. Bonding together has the advantages of high performance, low cost and high integration, but there are problems of complex manufacturing process and high manufacturing cost. Contents of the invention [0003] In view of this, the object of the present invention is to provide a wafer structure and its manufacturing method, and a chip structure with high integration, simple structure, and reduced manufacturing complexity. [0004] To achieve the above object, the present invention has the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14634H01L27/14636H01L27/1469H01L27/14687H01L27/14632H01L27/14629H01L27/14623H01L27/14643H01L27/14685H01L27/14689
Inventor 张国民
Owner WUHAN XINXIN SEMICON MFG CO LTD
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