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Method for preparing surface-hydroxylated iron oxide thin film photoanode material

A technology of iron oxide and photoanode, which is applied in metal material coating process, liquid chemical plating, coating, etc., to achieve the effect of reduced carrier recombination, obvious effect and simple process

Active Publication Date: 2019-10-18
TAIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are relatively few studies on the use of plasma technology to treat the surface of photoelectrodes.

Method used

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  • Method for preparing surface-hydroxylated iron oxide thin film photoanode material
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  • Method for preparing surface-hydroxylated iron oxide thin film photoanode material

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Embodiment 1

[0019] A method for preparing a surface hydroxylated iron oxide thin film photoanode material, the specific steps are as follows:

[0020] Prepare 20ml of FeCl containing 0.15mol / L 3 and 1mol / L NaNO 3 After fully stirring the solution, take 10ml of the solution and put it into a dyeing vat, then put it into FTO glass, heat it in water at 90°C for 3 hours, and form a uniform yellow β-FeOOH layer, calcinate at 800°C for 20min, and convert it into an iron oxide film; The good iron oxide film is transferred into a low-temperature plasma cleaning machine, and the plasma processing time is set to 60s, the power is 100W, and the air flow rate is 400ml / min. After the treatment, the surface hydroxylated iron oxide film photoanode material is obtained.

[0021] figure 1 is the X-ray diffraction pattern of the prepared iron oxide film, the diffraction peaks at 2θ equal to 35.7 and 54.6 degrees are consistent with the diffraction peaks of ferric oxide, corresponding to the 110 and 116 c...

Embodiment 2

[0023] A method for preparing a surface hydroxylated iron oxide thin film photoanode material, the specific steps are as follows:

[0024] Prepare 20ml of FeCl containing 0.15mol / L 3 and 1mol / L NaNO 3 After fully stirring the solution, take 10ml of the solution and put it into a dyeing vat, then put it into FTO glass, heat it in water at 90°C for 3 hours, and form a uniform yellow β-FeOOH layer, calcinate at 700°C for 30min, and convert it into an iron oxide film; The good iron oxide film is transferred into a low-temperature plasma cleaning machine, and the plasma processing time is set to 150s, the power is 100W, and the nitrogen flow rate is 400ml / min. After the treatment, the surface hydroxylated iron oxide film photoanode material is obtained.

[0025] figure 2 The ultraviolet-visible absorption diffuse reflectance diagram of the prepared iron oxide and the surface hydroxylated iron oxide film shows absorption characteristics in the ultraviolet and visible regions, but...

Embodiment 3

[0027] A preparation method of a surface hydroxylated iron oxide thin film photoanode material, the specific steps are as follows: prepare 20ml of FeCl containing 0.15mol / L 3 and 1mol / L NaNO 3After fully stirring the solution, take 10ml of the solution and put it into a dyeing vat, then put it into FTO glass, heat it in water at 95°C for 2 hours, and form a uniform yellow β-FeOOH layer, first calcinate at 550°C for 20min, then calcinate at 700°C for 30min, and transform It is an iron oxide film; transfer the prepared iron oxide film into a low-temperature plasma cleaning machine, set the plasma processing time to 120s, the power to 150W and the air flow to 400ml / min, and the surface hydroxylated iron oxide is obtained after the treatment is completed Thin film photoanode materials.

[0028] image 3 It is the linear scan voltammetry curve of iron oxide and surface hydroxylated iron oxide thin film electrode in dark state and light, the scan speed is set to 20mV / s, and the el...

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Abstract

The invention relates to a method for preparing a surface-hydroxylated iron oxide thin film photoanode material. The method comprises the following steps: (1) adopting inorganic iron salt and sodium nitrate as raw materials, adopting FTO conductive glass as a substrate, carrying out thermostatic hydrothermal reaction of 40-180 DEG C for 1-8 h, carrying out washing with water, carrying out drying,and carrying out calcination of 550-850 DEG C for 5-120 min, so as to obtain an iron oxide thin film electrode; and (2) treating the iron oxide thin film, introducing air, oxygen, argon or nitrogen asreactant gas, controlling the plasma treatment time to be 1-5000 s, controlling the power to be 5-300 W, and controlling the gas flow rate to be 200-520 ml / min. The method provided by the invention has the beneficial effects that the preparation process is simple and easy, the cost is low, and the efficiency is high; the photocatalytic water decomposition performance of the prepared surface-hydroxylated iron oxide thin film is excellent; the hydrogen yield is greatly improved; and the application prospect in the field of new energy materials in the future is relatively good.

Description

technical field [0001] The invention relates to a method for preparing a surface hydroxylated iron oxide thin film photoanode material, which belongs to the technical field of new energy materials. More specifically, the invention uses plasma technology to treat the surface of iron oxide thin film electrodes to introduce active hydroxyl groups into the surface. The onset potential of the treated iron oxide film for photocatalytic water splitting shifted negatively, the hydrogen production rate was greatly increased, the carrier recombination efficiency was reduced, and the interface hole transfer rate was increased. Background technique [0002] Energy crisis and environmental pollution are the main challenges facing the sustainable development of mankind. The development of new clean energy that can replace fossil energy has attracted the attention of governments around the world. Hydrogen energy is a clean energy, which is expected to replace fossil energy and become the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1295
Inventor 熊贤强范利亚武承林李江山
Owner TAIZHOU UNIV
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