A pixel structure that can improve the responsiveness of frame transfer ccd

Abstract

The invention belongs to the field of photoelectric detection and imaging, and in particular relates to a pixel structure capable of improving frame transfer CCD responsivity; including a substrate, a plurality of parallel vertical transfer electrodes, a CCD buried channel region, a guard ring and a channel resistance; on the substrate A p-type signal amplification area and an n-type signal amplification area are arranged sequentially between the CCD buried trench area; vertical transfer electrodes are connected above the CCD buried trench area, and one side of each vertical transfer electrode is connected to a signal amplifier through a dielectric layer Control electrodes; from the left and right sides of the top of the substrate up to the CCD buried channel area, a guard ring and a channel resistance are respectively provided. The invention can change the photosensitivity responsivity of the CCD pixel in real time by changing the injection concentration of the signal amplification structure and the applied voltage, so that the CCD can more flexibly select the signal amplification ability when facing different incident light intensities, and improve the CCD Imaging detection adaptability to different light intensity environments.

Description

technical field [0001] The invention belongs to the field of photoelectric detection and imaging, in particular to a pixel structure that can improve the responsivity of a frame transfer CCD. Background technique [0002] The charge-coupled element CCD that works in the frame transfer (Frame transfer, FT for short) mode is the CCD with the simplest structure and the easiest to manufacture. In the early years, the frame transfer CCD was considered a very good CCD structure, and although its size was twice the size of its photosensitive area, its performance was improved in many ways over the photoelectric camera tube. [0003] At present, the main method to improve the responsivity of frame transfer CCD is to reduce the noise of the device and improve the quantum efficiency of the device. In terms of noise reduction, under the conditions of specific operating frequency and operating temperature, the existing noise level of CCD has been reduced to less than 5 electrons, which...

AI Technical Summary

Problems solved by technology

[0004] Therefore, the existing device structure and technology have basically reached the response sensitivity limit of the frame transfer CCD. If you want to further improve the responsivity of the device, you must adopt new technology or / and device structure

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