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A single-carrier photodetector

A photodetector and single-carrier technology, applied in the field of photodetectors, can solve problems such as poor lattice quality and low frequency response bandwidth, and achieve the effects of low cost, high response speed, and stable device performance

Active Publication Date: 2021-08-27
SHANGHAI TECH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: the existing 2μm band photodetector lattice quality is not good, and the frequency response bandwidth is not high

Method used

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  • A single-carrier photodetector
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  • A single-carrier photodetector

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Embodiment

[0032] A method for preparing a single-carrier photodetector in a 2 μm band, comprising the following steps:

[0033] Step 1: Using molecular beam epitaxy to sequentially grow a cathode contact layer b, a collector layer c, an InGaAs / GaAsSb multi-quantum well absorption layer d, an electron blocking layer e, and an anode contact layer f on an InP substrate a, such as figure 1 Shown; The parameters of each growth layer are shown in Table 1:

[0034] Table 1

[0035]

[0036] It can be seen from Table 1 that the thickness of the cathode contact layer b is 900nm, and the doping concentration of one layer is 1×10 19 cm -3 The doping concentration of the N-type InP layer and one layer is 1×10 18 cm -3 The composition of the N-type InP layer, where the latter is used to reduce the diffusion of impurity ions to the InP collector layer;

[0037] The thickness of the collector layer c is 400nm, and the doping concentration is 1×10 16 cm -3 the following;

[0038]The structu...

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Abstract

The invention discloses a single-carrier photodetector and a preparation method thereof. The photodetector includes a semiconductor main body, a cathode and an anode, the cathode and the anode are in contact with the cathode contact layer and the anode contact layer respectively, and the surfaces of the two metal electrodes are connected to the coplanar waveguide electrodes; the structure of the semiconductor main body includes an InP lining in turn. Bottom, cathode contact layer, collector layer, InGaAs / GaAsSb multi-quantum well absorption layer, electron blocking layer, anode contact layer. The preparation method is as follows: sequentially growing a cathode contact layer on an InP substrate to obtain a semiconductor body; then preparing an anode, a first step, a cathode, a second step, and a coplanar waveguide electrode in sequence. The invention can work in the 2μm band, and because of the single carrier transmission structure, it also has the characteristics of low dark current and high response bandwidth, and can meet the requirements of the 2μm band optical communication system.

Description

technical field [0001] The invention relates to a semiconductor photodetector, in particular to a single-carrier photodetector based on an InGaAs / GaAsSb type II multi-quantum well absorption region working in a 2 μm band, and belongs to the technical field of photodetectors. Background technique [0002] With the maturity of optical communication technology, the capacity of optical communication system has gradually approached the theoretical limit. In the near future, existing optical communication systems will not be able to meet people's increasing demand for system capacity thanks to the low loss of 2μm-band hollow-core photonic band-gap fiber (HC-PBGF) , low delay characteristics, and the high gain and high bandwidth characteristics of Thulium doped fiber amplifier (TDFA), the 2μm band may become the development direction of the next generation optical communication system. The key devices (lasers, modulators, amplifiers, detectors, etc.) of 2μm optical communication s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/105H01L31/18B82Y40/00
CPCB82Y40/00H01L31/03046H01L31/035236H01L31/105H01L31/1844Y02P70/50
Inventor 陈佰乐陈垚江
Owner SHANGHAI TECH UNIV
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