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P-type polysilicon double-sided solar cell making method

A technology of solar cells and manufacturing methods, which is applied in the directions of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low utilization rate of the back surface and low conversion efficiency, and achieve the effect of improving structure and performance, and improving electrical performance parameters

Inactive Publication Date: 2019-10-08
SHANGHAI SHENZHOU NEW ENERGY DEV
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Problems solved by technology

[0002] Existing silicon-based solar cells have the problems of low conversion efficiency and low utilization of the back side

Method used

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  • P-type polysilicon double-sided solar cell making method

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Embodiment Construction

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] like figure 1 As shown, the present invention provides a kind of manufacturing method of P-type polysilicon double-sided solar cell, comprising:

[0033] Step S1, performing a pre-processing process on the polysilicon wafer to remove the surface damage layer and oxide layer of the polysilicon wafer;

[0034] Step S2, forming a passivation oxide layer on the surface of the treated polysilicon wafer by wet chemical method or dry thermal oxidation;

[0035] Step S3, using atomic layer deposition (ALD) or plasma enhanced chemical vapor deposition (PECVD) to deposit an Al2O3 layer on the back of the polysilicon wafer to form a field passivation effect;

[0036] Step S4, annealing the polysilicon wafer to further improve the st...

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Abstract

The invention provides a P-type polysilicon double-sided solar cell making method. Through front-end production processing on a polysilicon wafer, a surface damage layer and an oxide layer of the polysilicon wafer are removed; a wet chemical method or a dry method is used for thermal oxidation on the surface of the processed polysilicon wafer, and a passivation oxide layer is formed; an Al2O3 layer is deposited on the back surface of the polysilicon wafer to form field passivation effects; the polysilicon wafer is annealed; a plasma enhanced chemical vapor deposition method is adopted to deposit a silicon nitride passivation anti-reflection layer on the surface of the polysilicon wafer; and a metal Ag / Al gate electrode is printed on a laser groove of the silicon nitride passivation anti-reflection layer on the back surface of the polysilicon wafer, an Ag electrode is printed on the front surface of the polysilicon wafer, and good contact is ensured to be formed between the electrode and the silicon wafer. A plurality of silicon nitride stacks with different refractive indexes are adopted to passivate the front surface and the back surface, the passivation effects are enhanced, light reflection on the front and back surfaces is reduced, and the electrical performance parameters of the polysilicon solar cell are greatly improved.

Description

technical field [0001] The invention relates to a method for manufacturing a P-type polycrystalline silicon double-sided solar cell. Background technique [0002] Existing silicon-based solar cells have the problems of low conversion efficiency and low utilization of the back side. Contents of the invention [0003] The object of the present invention is to provide a method for manufacturing a P-type polysilicon double-sided solar cell. [0004] In order to solve the above problems, the invention provides a method for manufacturing a P-type polysilicon double-sided solar cell, comprising: [0005] Perform pre-process treatment on polysilicon wafers to remove the surface damage layer and oxide layer of polysilicon wafers; [0006] A passivation oxide layer is formed on the surface of the treated polysilicon wafer by wet chemical or dry thermal oxidation; [0007] Deposit an Al2O3 layer on the back of the polysilicon wafer by atomic layer deposition or plasma enhanced che...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/0216H01L31/0224
CPCH01L31/02167H01L31/02168H01L31/022425H01L31/202H01L31/208Y02E10/50Y02P70/50
Inventor 杨乾彭张松梁小静陶智华
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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