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A kind of copper alloy bonding wire and its preparation method and application

A bonding wire and copper alloy technology, which is applied in manufacturing tools, heat treatment equipment, semiconductor/solid-state device manufacturing, etc., can solve the problems of high pad stress, high copper hardness, and high cost, and achieve good performance, optimized parameters, and success. high rate effect

Active Publication Date: 2021-02-26
安徽广宇电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of pure copper wire bonding also has inevitable disadvantages: copper has high hardness and is not easy to deform, so the stress on the pad is relatively large, so that the lead wire is not easy to collapse and deform during the entire plastic molding process, resulting in short circuit failure. It is also easy to damage the surface of the chip during the process
However, the flexible bonded copper wire prepared by the method of the invention needs to add Pt, and the cost is high during large-scale application, and there is still a certain oxidation phenomenon during bonding; in fact, some appropriate trace elements can be doped in pure copper. Further improve the oxidation resistance of copper wire, but this method will increase the hardness of copper wire. In order to balance this contradiction, relevant researchers have been looking for a copper alloy bonding wire that is not only low in cost, but also suitable for high-end packaging. , while developing a matching bonding method

Method used

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Examples

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Effect test

preparation example Construction

[0030] The present invention provides a method for preparing the copper alloy bonding wire described in the above technical solution, comprising the following steps:

[0031] (1) Carry out vacuum melting after copper, palladium, zinc and aluminum briquetting, obtain alloy liquid;

[0032] (2) Water-cooled casting the alloy liquid described in step (1) to obtain an alloy rod;

[0033] (3) Perform annealing and wire drawing treatment on the alloy rod described in step (2) in sequence to obtain copper alloy bonding wire.

[0034] In the present invention, copper, palladium, zinc and aluminum are weighed, and vacuum smelted after being compacted to obtain alloy liquid. In the present invention, the purity of the Pd is preferably >99.99%, the purity of the Cu is preferably >99.99%, the purity of the Zn is preferably >99.9%, and the purity of the Al is preferably >99.9%. The present invention has no special requirements on the way of briquetting raw materials, and the burden after...

Embodiment 1

[0044] A kind of copper alloy bonding wire, its preparation comprises the following steps:

[0045] Weighing by mass content: palladium 3.0%, zinc 100ppm, aluminum 300ppm, and the balance is copper; the furnace charge is pressed into blocks, put into a boron nitride crucible, and the vacuum is 10 -3 mmHg, high-frequency induction melting under the protection of argon gas, the temperature is 1340 ° C, the time is 11 minutes, and then poured into a water-cooled copper mold to cast an alloy rod with a diameter of 6 mm;

[0046] Use the wire drawing equipment RJ2-280-9 with continuous annealing, anneal at 520°C for 0.04s, draw the 6mm alloy rod into an alloy wire with a diameter of 1mil, and rewind; the length of the heat-affected zone (HAZ) is as low as 60μm, FAB Vickers hardness is 7.8(g / mil 2 ).

[0047] The copper alloy bonding wire prepared in Example 1 is bonded by thermocompression ultrasonic bonding:

[0048] The bonding equipment is a gold wire ball bonding machine HS-...

Embodiment 2

[0050] A kind of copper alloy bonding wire, its preparation comprises the following steps:

[0051] Weighing by mass content: palladium 3.0%, zinc 50ppm, aluminum 200ppm, and the balance is copper; the furnace charge is pressed into blocks, put into a boron nitride crucible, and vacuumize to 10 -3 mmHg, high-frequency induction melting under the protection of argon gas, the temperature is 1340 ° C, the time is 12 minutes, and then poured into a water-cooled copper mold to cast an alloy rod with a diameter of 6 mm;

[0052] Use the wire drawing equipment RJ2-280-9 with continuous annealing, anneal at a temperature of 520°C for 0.04s, draw a 6mm alloy rod into an alloy wire with a diameter of 0.8mil, and rewind; the length of the heat-affected zone (HAZ) is detected to be low to 60μm, FAB Vickers hardness is 8.0(g / mil 2 ).

[0053] The copper alloy bonding wire prepared in Example 2 is bonded by thermocompression ultrasonic bonding:

[0054] The bonding equipment is a gold wi...

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Abstract

The invention provides a copper alloy bonding wire and its preparation method and application, belonging to the technical field of semiconductor packaging materials. The chemical composition of the copper alloy bonding wire is: Pd: 1-3%, Zn: 50-400ppm , Al: 200 ~ 400ppm, the balance is copper. The invention adds palladium and a small amount of zinc and aluminum to pure copper, which improves the oxidation resistance of the copper alloy bonding wire and balances the hardness of the copper alloy bonding wire; the invention adopts vacuum smelting and water-cooled casting to obtain alloy rods, which are annealed And wire drawing treatment, get copper alloy bonding wire, heat affected zone (HAZ) length as low as 60μm, FAB Vickers hardness is 7.5~8.0(g / mil 2 ); when the present invention is used for wire bonding in semiconductor packaging, a mixed gas of nitrogen and hydrogen is used for protection, the bonding success rate is >95%, and the average tensile force of copper wire ball bonding reaches 5.0gf.

Description

technical field [0001] The invention belongs to the technical field of semiconductor packaging materials, and in particular relates to a copper alloy bonding wire and a preparation method and application thereof. Background technique [0002] In the field of semiconductor packaging, wire bonding is a very important process, which is an important technology for connecting chips to external pins. With the development of packaging technology, there are three types of bonding wires commonly used in IC chip packaging factories, namely gold wires, bare copper wires and palladium-plated copper wires. Among them, gold wire is soft and has excellent electrical conductivity. Therefore, gold wire is the most commonly used bonding wire for large-scale integrated circuit chips in the past. However, gold is a rare metal. In addition, the soaring price of gold in recent years has increased the production cost of enterprises. . Therefore, replacing gold wires with more cost-effective meta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00C22C1/02C22F1/08C21D9/00H01L23/49H01L21/48
CPCC22C9/00C22C1/02C22F1/08C21D9/0075H01L24/43H01L24/45H01L2224/4321H01L2224/43848H01L2224/45147H01L2924/0103H01L2924/01013H01L2224/45015H01L2224/48511H01L2924/20751H01L2924/20752H01L2924/20753
Inventor 何孔田尹若磊唐文静钱萍
Owner 安徽广宇电子材料有限公司
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