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A double diode esd protection circuit

An ESD protection and circuit protection technology, applied in diodes, circuits, transistors, etc., can solve problems such as low failure current, and achieve the effects of increasing failure current, reducing turn-on voltage and on-resistance, and having a simple structure

Active Publication Date: 2021-04-27
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to address the shortcomings of the above-mentioned prior art, and propose a dual-diode ESD protection circuit, which is used to solve the technical problem of low failure current in the prior art

Method used

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  • A double diode esd protection circuit
  • A double diode esd protection circuit
  • A double diode esd protection circuit

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Embodiment Construction

[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] refer to image 3 , the invention includes a high-end diode, a low-end diode, an ESD main path and a parasitic PNP triode. The anode of the high-end diode, the cathode of the low-end diode and the emitter of the parasitic PNP transistor are connected to the circuit to be protected IO, the cathode of the high-end diode, the positive pole of the ESD main path and the base of the parasitic PNP transistor are connected to the base of the circuit to be protected VDD, and the low-end The anode of the diode, the cathode of the ESD main path and the collector of the parasitic PNP transistor are connected to the GND of the circuit to be protected.

[0026] High-end diodes can be deep N-well P+ diodes, N-type isolation diodes, N-well diodes, etc. Since N-well diodes are easy to manufacture and are most common in semiconductor manufactur...

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Abstract

The invention provides a dual diode ESD protection circuit, which includes a high-end diode, a low-end diode, an ESD main path and a parasitic PNP triode. The anode of the high-end diode, the cathode of the low-end diode and the emitter of the parasitic PNP triode are connected to the circuit to be protected IO, the cathode of the high-end diode, the positive pole of the ESD main path and the base of the parasitic PNP transistor are connected to the base of the circuit to be protected VDD, and the low-end The anode of the diode, the cathode of the ESD main path and the collector of the parasitic PNP transistor are connected to the GND of the circuit to be protected. The invention releases the ESD current from IO to GND through the parasitic PNP transistor, that is, adds an ESD current release path from IO to GND, and effectively improves the failure current of the circuit compared with the double-diode ESD protection circuit with the same area.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits and semiconductors, and relates to a dual-diode ESD protection circuit, which can be used for chip-level and system-level ESD protection in integrated circuits. [0002] technical background [0003] With the continuous advancement of the scientific and technological revolution, semiconductor technology and integrated circuit technology have also made great progress, resulting in the continuous reduction of chip area and continuous improvement of computing speed. However, high integration and high computing speed make integrated circuits and electronic devices more susceptible to ESD damage. Therefore, ESD is an important part of the reliability of integrated circuits. The ESD protection of integrated circuits is mainly implemented by ESD protection circuits. In the industry, failure current is an important indicator of ESD protection circuits. There are two types of ESD protection c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0259
Inventor 陈中李振荣赖彭宇庄奕琪
Owner XIDIAN UNIV
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