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Drive circuit for suppressing gate crosstalk and oscillation of SiC MOSFET

A driving circuit and circuit technology, applied in electrical components, high-efficiency power electronic conversion, output power conversion devices, etc., can solve the problem of no suppression of driving oscillation, and achieve the advantages of reducing oscillation, reducing current overshoot, and improving turn-on speed. Effect

Active Publication Date: 2019-09-06
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The variable gate drive voltage can only be applied to the stage after the SiC MOSFET is turned off and before the next turn-on, and has no ability to suppress the driving oscillation during the switching process

Method used

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  • Drive circuit for suppressing gate crosstalk and oscillation of SiC MOSFET
  • Drive circuit for suppressing gate crosstalk and oscillation of SiC MOSFET
  • Drive circuit for suppressing gate crosstalk and oscillation of SiC MOSFET

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Embodiment Construction

[0032] In order to clearly illustrate the technical features of the solution, the solution will be described below through specific implementation modes.

[0033] see Figure 1 to Figure 17 , the present invention is: a driving circuit for suppressing gate crosstalk and oscillation of a SiC MOSFET, which includes a push-pull circuit and a capacitor auxiliary circuit, the push-pull circuit and the capacitor auxiliary circuit are connected to the main circuit to form a complete working circuit, The main circuit is composed of upper and lower SiC MOSFET switch tubes connected to the same bridge arm;

[0034] The two control signal output terminals of the controller are respectively connected to the input terminals of two optocoupler chips, and the output terminals of the two optocoupler chips are respectively connected to the control signal input terminals of the two push-pull circuits and the two capacitor auxiliary circuits, The two output terminals of the two push-pull circui...

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Abstract

The invention provides a drive circuit for suppressing gate crosstalk and oscillation of a SiC MOSFET and belongs to the technical field of a power electronic switching device drive circuit. The technical scheme is characterized in that the drive circuit for suppressing gate crosstalk and oscillation of a SiC MOSFET comprises a push-pull circuit and a capacitor auxiliary circuit. The push-pull circuit and the capacitor auxiliary circuit are connected to a main circuit to form a complete working circuit. The main circuit is consists of two SiC MOSFET switch tubes connected to the same bridge arm up and down. The beneficial effects are that the drive circuit can effectively reduce the crosstalk voltage generated by the up and down two SiC MOSFET switch tubes on the same bridge arm without slowing down the on and off speed of the two SiC MOSFET switch tubes, and effectively reduce the oscillation of the driving output voltage of the two SiC MOSFET switch tubes in the on-off process.

Description

technical field [0001] The invention relates to the technical field of drive circuits for power electronic switching devices, in particular to a drive circuit for suppressing gate crosstalk and oscillation of SiC MOSFETs. Background technique [0002] SiC MOSFET has the advantages of fast switching speed, low on-resistance, high temperature resistance, and good heat dissipation. It is suitable for high power density, high switching frequency, high efficiency and harsh environments. However, a large increase in switching speed will cause a large dv / dt between the drain and source, which will easily cause crosstalk to the drive of other switching devices in the bridge arm, and at the same time cause the device drive itself to oscillate. Since the turn-on threshold of SiC MOSFET is low and the maximum negative voltage of the gate is small, severe crosstalk may lead to false turn-on or gate-source negative voltage breakdown, and severe driving oscillation may lead to gate-source...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/092
CPCH02M1/092H02M1/0038Y02B70/10
Inventor 李小强王文杰贺生鹏林铭恩伍小杰余超纪明理徐塑哲周子奇董云鹤何承原
Owner CHINA UNIV OF MINING & TECH
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