Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vertical-cavity surface-emitting laser and preparation method thereof

A vertical cavity surface emission, laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of strain accumulation, wafer warping, etc., and achieve the effect of eliminating stress, avoiding wafer warping, and avoiding poor quality

Inactive Publication Date: 2019-09-06
度亘核芯光电技术(苏州)有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defect of wafer warpage caused by the accumulation of strain caused by the increase in the number of distributed Bragg reflectors in the prior art, and to provide a vertical cavity surface emitting laser and a preparation method thereof

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical-cavity surface-emitting laser and preparation method thereof
  • Vertical-cavity surface-emitting laser and preparation method thereof
  • Vertical-cavity surface-emitting laser and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment provides a growth method for a vertical cavity surface emitting laser, which has two distributed Bragg reflectors, and grows the second distributed Bragg reflector upward from the substrate, and then grows the first distributed Bragg reflector, and the quantum well active region Between the two distributed Bragg reflectors, the material is AlGaAs space layer and AlGaAs / InGaAs quantum well, the total thickness is one optical cavity length (265nm), take x=0, y=0.95, a=0.7, b=0.95, c=0.65, d=1, N=35, N'=36, the body is as follows:

[0040] (1) Determine the thickness of each layer:

[0041] Using ellipsometer to test the refractive index of the material at 850nm wavelength, Al x Ga 1-x As y P 1-y The refractive index is 3.623, Al a Ga 1-a As b P 1-b The refractive index of 3.166, Al c Ga 1-c The refractive index of As is 3.195, Al d Ga 1-d The refractive index of As is 2.980, using the formula d=λ / 4n, Al can be obtained x Ga 1-x As y P 1-y T...

Embodiment 2

[0047] This embodiment provides a method for growing a vertical cavity surface-emitting laser. There are three distributed Bragg reflectors, and two second distributed Bragg reflectors are grown upward from the substrate, and then the first distributed Bragg reflector is grown. Between the two second distributed Bragg reflectors, the material is AlGaAs space layer and AlGaAs / InGaAs quantum well, the total thickness is one optical cavity length (265nm), take x=0.65, y=0.95, a=1, b=0.95 , c=0.15, d=0.9, N=21, N'=15, N"=5, specifically as follows:

[0048] (1) Determine the thickness of each layer:

[0049] Using ellipsometer to test the refractive index of the material at 850nm wavelength, Al x Ga 1-x As y P 1-y The refractive index of 3.200, Al a Ga 1-a As b P 1-b The refractive index of 2.971, Al c Ga 1-c The refractive index of As is 3.506, Al d Ga 1-d The refractive index of As is 3.040. Using the formula d=λ / 4n, Al is obtained x Ga 1-x As y P 1-y The thickne...

Embodiment 3

[0056] This embodiment provides a method for growing a vertical cavity surface emitting laser. There are two distributed Bragg reflectors. The first distributed Bragg reflector is grown upward from the substrate, and then the second distributed Bragg reflector is grown. Between the two distributed Bragg reflectors, the material is AlGaAs space layer and AlGaAs / InGaAs quantum well, the total thickness is one optical cavity length (265nm), get x=0.1, y=0.97, a=0.7, b=0.96, c= 0.08, d=0.7, N=25, N'=30, details are as follows:

[0057] (1) Determine the thickness of each layer:

[0058] Using ellipsometer to test the refractive index of the material at 850nm wavelength, Al x Ga 1-x As y P 1-y The refractive index of 3.565, Al a Ga 1-a As b P 1-b The refractive index of 3.169, Al c Ga 1-c The refractive index of As is 3.550, Al d Ga 1-d The refractive index of As is 3.164. Using the formula d=λ / 4n, Al x Ga 1-x As y P 1-y The thickness is 59.60nm, Al a Ga 1-a As b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vertical-cavity surface-emitting laser and a preparation method thereof. The method specifically comprises the steps of providing a substrate; and sequentially growing at least two groups of distributed Bragg reflectors on the substrate, wherein the strain type of at least one group of distributed Bragg reflectors relative to the substrate is a tensile strain, and the strain type of at least one group of distributed Bragg reflectors relative to the substrate is a compressive strain. By growing the distributed Bragg reflectors with the strain type being the tensile strain and the distributed Bragg reflectors with the strain type being the compressive strain, the mutual compensation of the stresses of the distributed Bragg reflectors is realized by adjusting the period number and the strain capacity of the distributed Bragg reflectors, the stress caused by lattice mismatch is eliminated, the growth of the strain-free VCSEL is realized, and the problem of warpingof the VCSEL is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser and a preparation method thereof. Background technique [0002] Vertical Cavity Surface Emitting Laser (Vertical Cavity Surface Emitting Laster, referred to as VCSEL) is generally made of gallium arsenide (GaAs) substrate. Cavity Surface Emitting Lasers. VCSEL has the advantages of small size, circular output spot, single longitudinal mode output, small threshold current, low price, and easy integration into a large-area array. The increasing demand for optical storage and the increasing density of optical storage provide a new way. Generally, VSCELs often use distributed Bragg reflectors (Distributed Bragg Reflector, DBR for short) to form a resonant cavity. DBR is actually a periodic medium with different refractive indices, and the optical thickness of each layer of material is 1 / 4 of the central reflection wavelength. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/187H01S5/183
CPCH01S5/18361H01S5/187
Inventor 赵勇明杨国文张艳春赵卫东
Owner 度亘核芯光电技术(苏州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com