A kind of inp quantum dot and preparation method thereof

Abstract

The invention discloses a method for preparing InP quantum dots, which relates to the field of quantum dot materials, comprising the following steps: first removing water and oxygen from a reaction vessel, then preparing a uniform precursor solution mixed with indium and zinc, adding a phosphorus precursor, Then add the synthetic shell material, and then adopt the method of increasing the thickness of the shell while raising the temperature to prepare the InP quantum dot structure with the shell structure. In the InP quantum dot prepared by the invention, the InP crystal nucleus is nanostructure, and the shell layer composition includes one or more of ZnS, ZnSe and ZnSeS; the fluorescence emission peak ranges from 450 to 700nm, and the half maximum width is lower than 55nm. The invention can effectively control crystal nucleus growth and fluorescence emission wavelength, and obtain InP quantum dots with fine and uniform crystal nucleus particle size, wide luminous color gamut, and narrow half-height width; meanwhile, it can reduce crystal nucleus surface oxidation, and promote high-quality and low-defect shell The ground is thickened to improve the luminous efficiency of InP quantum dots.

Description

technical field [0001] The invention relates to the field of quantum dot materials, in particular to an InP quantum dot and a preparation method thereof. Background technique [0002] Quantum dots are widely used in technical fields such as LED light-emitting devices, solar cells, bioluminescent imaging, and lasers due to their high-purity color, high fluorescence intensity, excellent luminous range adjustability, and good biocompatibility. Although II-VI quantum dots commonly used in the market have high optical properties, they contain heavy metal element cadmium, which will cause adverse effects on human health and the ecological environment, limiting its application and promotion. [0003] As a representative of III-V semiconductor materials, InP quantum dot materials are regarded as the next-generation quantum dot star materials because of their low toxicity and suitable luminescence range. In the current preparation technology of InP quantum dots, organic alkyl phosph...

AI Technical Summary

Problems solved by technology

At present, the commonly used encapsulation method for III-V InP quantum dots is to gradually increase the temperature at a higher temperature, by injecting in batches including zinc precursor solution (shell cation precursor), sulfur precursor solution and selenium precursor. One or more methods in the solution (shell anion precursor) are carried out, the method process is complicated, and the preparation time is long, the repeatability is poor, the production cost is still high, and the half-width of the InP quantum dots obtained is relatively large

[0005] Compared with the preparation of InP quantum dots by using organic alkylphosphine such as tris(trimethylsilyl)phosphine as phosphorus source, using organic aminophosphine such as tris(dimethylamino)phosphine and tris(diethylamino)phosphine as phosphorus source Although there are many advantages in the InP quantum dots synthesized from natural sources, the half-maximum width of the synthesized InP quantum dots is wider, and it is difficult to obtain blue InP quantum dots with bluer fluorescence emission peaks.

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