Method for reducing organic matters on surface of silicon blocks, and preparation method of monocrystalline silicon
A technology of organic matter and silicon block, which is applied in the direction of surface etching composition, single crystal growth, single crystal growth, etc., can solve problems such as unclear carbon pollution, and achieve the effect of reducing the concentration of organic matter and avoiding wear
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[0101] The embodiment of the present invention discloses a method for preparing monocrystalline silicon, which is prepared by the Czochralski method by using the silicon block described in the above technical solution as a raw material.
[0102] The invention also discloses a single crystal silicon, which is produced by the method described in the above technical solution, and the concentration of carbon-containing impurities is below 50ppba.
Embodiment 1
[0105] Breaking the silicon ingot into silicon blocks on a Teflon plate, and then using the Teflon plate to transport the silicon blocks above the etching container;
[0106] Two pillars are arranged between the two opposite side walls of the etching container, and the two pillars divide the etching container into a first area, a second area and a third area; the first area, the second The volume of the area and the third area are equal.
[0107] Four side panels surrounded by a square are arranged in the first area;
[0108] Four side panels surrounded by a square are arranged in the second area;
[0109] Four side panels forming a square are arranged in the third area;
[0110] There is a gap between the side wall and the side panel of the etching container.
[0111] Cooperating with the etching container, the length of one side of the Teflon plate is equal to the distance between the two pillars.
[0112] Tilt the Teflon plate to slide the silicon block into the etching...
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