A kind of deep ultraviolet led epitaxial structure and its preparation method and deep ultraviolet led
An epitaxial structure, deep ultraviolet technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency, restricting the development of commercialization, etc., achieve high luminous efficiency, improve hole injection rate, and improve internal quantum efficiency and the effect of transmit power
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Embodiment 1
[0054] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;
[0055] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.
[0056] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:
[0057] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...
Embodiment 2
[0069] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;
[0070] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.
[0071] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:
[0072] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...
Embodiment 3
[0084] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;
[0085] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.
[0086] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:
[0087] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...
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