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Method and system for improving capacitance value accuracy of capacitor

A capacitance value and precision technology, applied in the field of semiconductor production machine parameter control, can solve problems such as low machine adjustment efficiency, save manual adjustment time, improve accuracy, and achieve the effect of automatic adjustment

Active Publication Date: 2019-08-02
福建省福联集成电路有限公司
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Problems solved by technology

[0007] For this reason, it is necessary to provide a method and system for improving the accuracy of capacitor capacitance, so as to solve the problem of low efficiency of existing machine adjustment

Method used

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  • Method and system for improving capacitance value accuracy of capacitor
  • Method and system for improving capacitance value accuracy of capacitor

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Embodiment Construction

[0045] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0046] see Figure 1 to Figure 2 , this embodiment provides a method for improving the accuracy of capacitance value, which can be applied in figure 2 on the system. The subject of the method execution may be an independent general controller on the system, and the general controller plays the role of information forwarding and timing control. Or each step can also be performed by individual modules. The method includes the following steps: step S101 drives the wafer transfer module to transfer the wafer to the wafer preheating chamber group; step S102 drives the wafer preheating chamber group to heat the wafer; the heating can be heating the bottom surface of the wafer , and then the heat will be conducted through the bottom surf...

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Abstract

The invention discloses a method and a system for improving the capacitance value accuracy of a capacitor. The method comprises the following steps that: driving a wafer transmission module to transmit a wafer to a wafer preheating cavity group; driving the wafer preheating cavity group to heat the wafer; driving the wafer transmission module to transmit the heated wafer to an infrared imaging module; driving the infrared imaging module to shoot the infrared photo of the surface of the wafer; driving a communication module to transmit a wafer infrared photo to a data analyzing and processing center; and through infrared imaging, calculating the thickness of a film, and automatically applying to dielectric layer deposition. Therefore, the automatic regulation of a deposition parameter can be realized, the capacitance value accuracy of the capacitor is improved, and manual regulation time is saved.

Description

technical field [0001] The invention relates to the field of parameter control of semiconductor production machines, in particular to a method and system for improving the accuracy of capacitance values. Background technique [0002] The main process parameters of the existing chemical vapor deposition method for preparing thin films are: [0003] (1) Temperature. Temperature has a great influence on the growth rate of chemical vapor deposition film. [0004] ⑵ Reactant input and ratio. The gas composition ratio will affect the coating quality and growth rate. [0005] (3) Pressure. Pressure will affect chemical vapor deposition reaction efficiency, film quality and uniformity of film thickness. [0006] The components of the chemical vapor deposition machine are equipped with a monitoring module for the above main process parameters, which can adjust the relevant parameters according to the performance requirements of the deposited film, so as to meet the production ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/00G01J5/00G01B7/06C23C16/52
CPCC23C16/52G01B7/085G01J5/00G01J2005/0077G01N25/00
Inventor 林锦伟林伟铭钟艾东甘凯杰翁佩雪郭文海邓丹丹赵玉会
Owner 福建省福联集成电路有限公司
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