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Complementary metal oxide image sensor, image processing method, and storage medium

An image sensor, complementary metal technology, applied in the field of image processing, can solve the problems of reducing the quantum efficiency of CIS, long propagation distance, energy waste, etc.

Active Publication Date: 2019-07-30
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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Problems solved by technology

[0003] Traditional CIS can include two different structures, Front Side Illumination (FSI) and Back Side Illumination (BSI), and whether it is FSI or BSI, the photodiode (photodiode, PD) in the pixel unit needs It depends on the thickness of silicon to absorb light. However, when the thickness of silicon is large, photoelectrons need to go through a relatively long propagation distance, resulting in a waste of energy. Correspondingly, the transmission time is relatively long, which reduces the quantum of CIS. efficiency

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  • Complementary metal oxide image sensor, image processing method, and storage medium
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  • Complementary metal oxide image sensor, image processing method, and storage medium

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Embodiment Construction

[0053] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the specific embodiments described here are only used to explain the related application, not to limit the application. It should also be noted that, for the convenience of description, only the parts related to the relevant application are shown in the drawings.

[0054] For traditional CIS, whether it is FSI or BSI, the PDs in it all absorb the light of 400nm-1100nm. Therefore, it is necessary to add filters of different colors on it, so that a single pixel only absorbs one color. At the same time, deep trench isolation (Deep Trench Isolation, DTI) is required for isolation between each pixel, so as to prevent incident light of different colors from entering adjacent pixels, thereby avoiding crosstalk between adjacent pixels.

[0055]Furthermor...

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Abstract

The embodiment of the invention discloses a complementary metal oxide image sensor, an image processing method and a storage medium. The CIS comprises a semiconductor substrate, a sub-wavelength pixelunit, and a reading circuit; the sub-wavelength pixel unit is arranged in the semiconductor substrate and is connected with the reading circuit; wherein the sub-wavelength pixel unit comprises n PD columns; N is an integer greater than or equal to 0; N size parameters corresponding to the n PD columns are determined by preset wavelengths; and the n PD columns absorb and convert the incident lightaccording to the preset wavelength to obtain an electric signal corresponding to the incident light.

Description

technical field [0001] The embodiments of the present application relate to the field of image processing, and in particular, to a complementary metal oxide image sensor, an image processing method, and a storage medium. Background technique [0002] An image sensor is a device capable of converting optical signals into electrical signals, and can be divided into two types: Charge Coupled Device (CCD) and Complementary Metal-Oxide Semiconductor (CMOS). Among them, the complementary metal oxide image sensor (CMOS Image Sensor, CIS) is easy to integrate the system on chip because its manufacturing process is compatible with the signal processing chip and other manufacturing processes. The image processing noise reduction algorithm can improve the signal-to-noise ratio, so it has occupied a dominant position in the field of image sensor applications. [0003] Traditional CIS can include two different structures, Front Side Illumination (FSI) and Back Side Illumination (BSI), a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N9/04
CPCH01L27/14645H01L27/14607H01L27/1461H04N23/10
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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