Structure for preventing back scrapping of electrode surface glass substrate under dry etching and process method of structure

A glass substrate, electrode surface technology, applied in the direction of metal material coating process, circuit, discharge tube, etc., can solve the problems of glass scratches, pits, product scrap, etc., and achieve the effect of preventing scratches and pits

Active Publication Date: 2019-07-26
芜湖通潮精密机械股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the dielectric layer on the surface of the lower electrode is Al 2 o 3 , the hardness is HV900±100, and the hardness of the glass substrate is HV600±50. Due to the increase of Coulomb force and plasma force, the high hardness dielectric layer will cause scratches and pits on the lower surface of the glass, resulting in product scrapping and a serious reduction Yield

Method used

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  • Structure for preventing back scrapping of electrode surface glass substrate under dry etching and process method of structure
  • Structure for preventing back scrapping of electrode surface glass substrate under dry etching and process method of structure

Examples

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Embodiment 1

[0040] A process for preventing back scratching of a glass substrate on the surface of an electrode by dry engraving, the specific steps are as follows:

[0041] Step 1. Cleaning and drying: Use high-pressure water washing to clean the lower electrode. The resistivity of deionized water used in high-pressure water washing is greater than 4MΩ*cm, and the pressure is 100bar. Then use compressed air holes to dry the surface of the lower electrode, and finally dry it in an oven at 60°C 24h.

[0042] Step 2. Plasma spraying dense layer: plasma spraying is Y 2 o 3 and Al 2 o 3 The composite powder, where Y 2 o 3 The content is 80% (wt.). During plasma spraying, a six-axis manipulator is used to control the movement of the spray gun. The spraying process parameters are: the main gas Ar flow rate is 40L / min, the secondary gas H 2 The flow rate is 10L / min, the voltage is 36V, the current is 800A, the powder feeding rate is 10g / min, the spraying distance is 100mm, the thickness of...

Embodiment 2

[0048] A process for preventing back scratching of a glass substrate on the surface of an electrode by dry engraving, the specific steps are as follows:

[0049] Step 1. Cleaning and drying: Use high-pressure water washing to clean the lower electrode. The resistivity of deionized water used in high-pressure water washing is greater than 4MΩ*cm, and the pressure is 150bar. Then use compressed air holes to dry the surface of the lower electrode, and finally dry it in an oven at 80°C 12h.

[0050] Step 2. Plasma spraying dense layer: plasma spraying is Y 2 o 3 and Al 2 o 3 The composite powder, where Y 2 o 3 The content is 85% (wt.), and the six-axis manipulator is used to control the movement of the spray gun during plasma spraying. The spraying process parameters are: the main gas Ar flow rate is 60L / min, the secondary gas H 2 The flow rate is 15L / min, the voltage is 40V, the current is 900A, the powder feeding rate is 18g / min, the spraying distance is 150mm, the thickne...

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Abstract

The invention discloses a structure for preventing back scrapping of an electrode surface glass substrate under dry etching and a process method of the structure. The structure comprises a dielectriclayer and a glass substrate and also comprises a composite layer, wherein the composite layer is arranged between the dielectric layer and the glass substrate and is used for reducing contact hardness. The Y2O3 and Al2O3 composite layer are additionally arranged on a traditional lower electrode dielectric layer, the surface hardness is controlled to be within a range of HV300-500, the harness of acoating layer is reduced with increase of Y2O3 content, so that the surface hardness of a lower electrode is lower than glass hardness, and back scratch and pit of glass are effectively prevented.

Description

technical field [0001] The invention belongs to the technical field of dry etching electrode surface treatment, and in particular relates to a structure and a process method for preventing back scratching of a glass substrate on a dry etching electrode surface. Background technique [0002] The dry etching machine is the key equipment in the process of manufacturing liquid crystal panels and semiconductors. The lower electrode is the key component in the dry etching machine. The lower electrode is a typical sandwich structure. See figure 1 shown. When the etching machine is working, the glass substrate is placed on the surface of the lower electrode, which is in direct contact with the dielectric layer of the lower electrode. The DC power supply is connected to the W layer through the DC electrode column on the back of the lower electrode to make it positively charged, and the lower surface of the glass generates an induced negative charge. , Coulomb stress is generated bet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/305H01L21/3065C23C4/11G02F1/13C23C4/134
CPCC23C4/11C23C4/134G02F1/1303H01J37/3056H01L21/3065
Inventor 何新玉赵浩司奇峰
Owner 芜湖通潮精密机械股份有限公司
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