Method for preparing two-dimensional ternary atomic crystal

Abstract

The invention relates to a method for preparing a two-dimensional ternary atomic crystal. The method comprises the following steps: placing a substrate in a chemical vapor deposition system, introducing argon-oxygen mixed gas, heating to a certain temperature for a period of time, and carrying out annealing treatment to enable the substrate to generate a periodic step; sequentially placing the tworeaction sources and the annealed substrate in a certain proportion in a first temperature zone, a second temperature zone and a third temperature zone of a chemical vapor deposition system; introducing carrier gas and continuously introducing a certain flow of oxygen, respectively heating the temperatures of the three temperature zones under a certain air pressure for a period of time to form the two-dimensional ternary atomic crystal MXO. The epitaxial growth method provided by the invention is simple, rapid and low in cost, and the prepared single crystal film is clean and nondestructive,has excellent properties, and can be used for preparing high-performance electronic devices and photoelectric devices and used for electrocatalysis.

Description

Technical field [0001] The present invention generally relates to the technical field of nanomaterial preparation, and more particularly, to a method for preparing two-dimensional materials by chemical vapor deposition, especially two-dimensional ternary atomic crystals. Background technique [0002] Since the discovery of graphene, two-dimensional materials have attracted a lot of attention. Two-dimensional materials have the thickness of a single atomic layer, which can be used to study basic scientific problems in low-dimensional restricted systems, and are also important research objects in application fields such as information, energy, and biomedicine. In particular, transition metal chalcogenides, as semiconductor materials with excellent properties, are ideal materials for the construction of the next generation of lighter, thinner, faster, and more sensitive electronic and optoelectronic devices. Among them, the widely studied molybdenum disulfide is a typical transitio...

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Problems solved by technology

However, these methods cannot be completed at the same time during the sample preparation process, and the sample needs to be processed multiple times, and the processing conditions are strong and the controllability is not high, and the sample is easily damaged, resulting in defects or absorbing excess oxygen atoms.

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