Flow control method and device, and reaction chamber

Abstract

The invention provides a flow control method and device, and a reaction chamber. By sending a process enable signal to a second control unit of one process chamber, and enabling the second control unit to be networked with a first control unit according to the process enable signal, a target flow value can be sent to the first control unit through the second control unit, so that the first controlunit is automatically controlled to adjust the flow of a common fluid charged into at least one process chamber carrying out a process through a common flow channel to reach the target flow value, without the need of manual configuration, and then the control accuracy is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a flow control method and device, and a reaction chamber. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) epitaxy is a vapor phase epitaxial growth technology that deposits a solid film on the surface of a substrate by means of a space gas phase chemical reaction. Good advantage, the CVD method is currently the main method for silicon epitaxial growth. The current CVD silicon epitaxial equipment mainly has two types: multi-chip and single-chip. For single-chip CVD equipment, multi-chamber equipment with multiple process chambers can achieve higher wafer yields compared with single-chamber equipment. Equipment will have a larger market. [0003] A single-chip multi-chamber CVD equipment provided by the prior art, the CVD equipment includes a flow control device, which adopts the i...

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Problems solved by technology

Once the staff makes mistakes, it will cause the whole furnace to be scrapped and cause great losses.

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