Memories and methods of operation and formation thereof

A working method and memory technology, applied in static memory, digital memory information, information storage and other directions, can solve the problems of low integration of single-transistor static memory, and achieve the effects of simple structure, small area and high integration

Active Publication Date: 2021-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the integration level of existing single-transistor SRAMs is still low

Method used

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  • Memories and methods of operation and formation thereof
  • Memories and methods of operation and formation thereof
  • Memories and methods of operation and formation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] There are many problems in storage, for example: the volume of the memory is relatively large, and the degree of integration is low.

[0036] Combining with a single-transistor static memory, the reasons for the low integration level of the prior art single-transistor static memory are analyzed:

[0037] figure 1 It is a schematic diagram of the structure of a single-transistor static memory.

[0038] Please refer to figure 1 , the memory includes a plurality of memory cells, the memory cells include: a substrate 10, an n well 13 and a p well 14 located in the substrate 10, the p well 14 and the n well 13 are vertical to the substrate 10 arranged in the direction of the surface; the gate structure 15 located on the surface of the p-well 14; the word line WL connected to the gate structure 15; the source region 11 and the drain region 12 located on both sides of the gate structure 15, so The source region 11 and the drain region 12 are n-type ion doped regions; the so...

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PUM

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Abstract

A memory and its working method and formation method, wherein, the memory includes: a substrate; a first well region located in the substrate, the first well region has first dopant ions; In the second well region on the top surface of the first well region, there are second dopant ions in the second well region, and the conductivity type of the second dopant ions is opposite to that of the first dopant ions; The gate structure on the surface of the second well region; the doped region in the second well region located on one side of the gate structure, the doped region has third doping ions, and the conductivity of the third doping ions The type is opposite to the conductivity type of the second dopant ions. The memory has a simple structure and a high degree of integration.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memory and its working method and forming method. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of the memory, and at the same time put forward higher requirements for the performance of the memory. [0003] Since the static memory (SRAM) can save the data stored in it without refreshing the circuit, and the power consumption is small, the application of the SRAM is more and more extensive. A traditional SRAM storage unit generally consists of six MOS transistors or four MOS transistors, and the number of MOS transistors in the storage unit is large, resulting in a large volume of the MOS transistors. In order to reduce the size of the memory and improve the integration level, a sin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11H01L21/8244G11C11/411
CPCG11C11/411H10B10/12
Inventor 廖淼潘梓诚
Owner SEMICON MFG INT (SHANGHAI) CORP
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