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Method for preparing inorganic scintillator film

A bulk film and inorganic technology, which is applied in the field of preparation of inorganic scintillator film, can solve the problems of slow thick film speed, long operation time, and high vacuum degree requirements, and achieve the effects of strong adhesion, low cost, and improved utilization rate

Active Publication Date: 2019-07-09
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the vacuum thermal evaporation method requires a high degree of vacuum (vacuum degree ~ 10 -4 Pa), long operating time (slow evaporation to 100um level thick film)

Method used

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  • Method for preparing inorganic scintillator film
  • Method for preparing inorganic scintillator film
  • Method for preparing inorganic scintillator film

Examples

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Effect test

Embodiment 1

[0030] A method for preparing an inorganic scintillator film layer, the specific preparation steps are as follows:

[0031] Step 1: Set the evaporation program of the substrate, raise the temperature from room temperature to 300 degrees in 100s, keep it at 300 degrees for 6400s, and then cool down naturally.

[0032] Step 2: Set the evaporation program of the evaporation source. First, the temperature is raised from room temperature to 300 degrees in 100s, and kept at 300 degrees for 300s, then raised to 350 degrees in 100s, kept in heat for 6000s, and then cooled down naturally.

[0033] Step 3: Grinding the pure phase of CsCu 2 I 3 The powder was used as the evaporation source, and the cleaned FTO was used as the substrate, which were respectively placed in the deposition chamber of the near-space sublimation furnace, and the distance between the evaporation source and the substrate was adjusted to 1cm.

[0034] Step 4: Turn on the mechanical pump and pump the vacuum until...

Embodiment 2

[0037] This embodiment comprises the following steps:

[0038] Step 1: Set the evaporation program of the substrate, raise the temperature from room temperature to 300 degrees in 100s, keep it at 300 degrees for 6400s, and then cool down naturally.

[0039] Step 2: Set the evaporation program of the evaporation source. First, the temperature is raised from room temperature to 300 degrees in 100s, and kept at 300 degrees for 300s, then raised to 400 degrees in 100s, kept in heat for 6000s, and then cooled down naturally.

[0040] Step 3: Grinding the pure phase of CsCu 2 I 3 The powder was used as the evaporation source, and the cleaned FTO was used as the substrate, which were respectively placed in the deposition chamber of the near-space sublimation furnace, and the distance between the evaporation source and the substrate was adjusted to 0.5 cm.

[0041] Step 4: Turn on the mechanical pump and pump the vacuum until the vacuum degree in the deposition chamber is 4Pa.

[0...

Embodiment 3

[0044] This embodiment comprises the following steps:

[0045] Step 1: Set the evaporation program of the substrate, raise the temperature from room temperature to 300 degrees in 100s, keep it at 300 degrees for 6400s, and then cool down naturally.

[0046] Step 2: Set the evaporation program of the evaporation source. First, the temperature is raised from room temperature to 300 degrees in 100s, and kept at 300 degrees for 300s, then raised to 350 degrees in 100s, kept in heat for 6000s, and then cooled down naturally.

[0047] Step 3: Grinding the pure phase of CsCu 2 I 3 The powder was used as the evaporation source, and the cleaned FTO was used as the substrate, which were respectively placed in the deposition chamber of the near-space sublimation furnace, and the distance between the evaporation source and the substrate was adjusted to 1cm.

[0048] Step 4: Turn on the mechanical pump and pump the vacuum until the vacuum degree in the deposition chamber is 3Pa.

[0049...

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Abstract

The invention discloses a method for preparing an inorganic scintillator film. The method comprises the following steps of using an AxByXz powder raw material as an evaporation source; by using a substance sublimation principle, firstly performing vacuum pumping treatment on a deposition cavity containing the raw material and a substrate; then, heating the raw material and the substrate in the vacuum environment so that the AxByXz material is deposited onto the substrate; and thus obtaining an AxByXz inorganic scintillator film, wherein the A is a univalent alkali metal cation; the B is any one element from Cu and Ag; the X is a univalent halogen anion; and the ratio of the x to the y to the z is 1:1:2 or 1:2:3 or 2:1:3 or 3:2:5. The preparation method has the advantages that the operationis simple; the deposition speed is high; the cost is low; the large-area mass synthesis can be realized; and the obtained inorganic scintillator film layer has the advantages of uniformity, compactness, high crystallinity degree, good orientation performance, strong adhesion force with the substrate and excellent x-ray response performance. The invention provides an effective solution for the preparation of an inorganic scintillator thick film, and further provides an effective measure for the integration of a backend scintillator detector; and the market application potential is great.

Description

technical field [0001] The invention belongs to the field of high-performance scintillator and high-energy ray detection, and more specifically relates to a method for preparing an inorganic scintillator film. Background technique [0002] Detectors based on inorganic scintillators are widely used in medical radiation, high-energy physics, nuclear physics and many other fields due to their high detection efficiency and short resolution time. Inorganic scintillator materials can be divided into the following three parts: the first part is a series of alkali halide crystals, such as NaI(Tl), CsI(Tl,Na) crystals. Among them, NaI(Tl) crystal has high luminous efficiency and strong resolution ability, so it is the most widely used one; CsI(Tl) crystal has high density and large average atomic number, so it has a strong ability to block rays and is suitable for use in gamma rays. The second part is oxide scintillation crystals, including germanate, tungstate crystals, etc. Comm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/202C09K11/61
CPCC09K11/616G01T1/202G01T1/2023
Inventor 牛广达唐江杨波杨颖张慕懿邓贞宙
Owner HUAZHONG UNIV OF SCI & TECH
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