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A kind of gallium oxide nano material transfer method

A technology of nanomaterials and transfer methods, which is applied in the field of separation of nanomaterials to achieve good separation effect, simple operation and high success rate of transfer

Active Publication Date: 2021-10-08
纳微朗科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While growing β-GaO nanosheets, there will be β-GaO nanowires and β-GaO nanoribbons. At present, there is no effective way to separate nanowires, nanoribbons, and nanosheets. In order to separate gallium oxide nanosheets, nanoribbons and nanowires from CVD-grown β-gallium oxide nanomaterials, and to provide convenience for the research of β-gallium oxide nanomaterials and the preparation of gallium oxide-based devices, it is urgent to propose a An effective and simple method for transferring gallium oxide materials

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  • A kind of gallium oxide nano material transfer method
  • A kind of gallium oxide nano material transfer method
  • A kind of gallium oxide nano material transfer method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: Method for transferring gallium oxide nano.

[0034] The steps are as follows:

[0035] (1) A (0001) gallium nitride film is a substrate, an area of ​​2 mm × 2 mm, and a thickness of 20 μm, and a CVD method is generated on a gallium nitride film substrate to grow β-gallium oxide nanomaterials.

[0036] (2) Use polysilicon as a substrate material, deposit a layer of SiO on substrate material 2 The dielectric layer is to increase the adhesion between the gallium oxide material and the substrate and the insulation effect. SiO 2 The dielectric layer thickness is 200 nm.

[0037] (3) Put the growth of beta-gallium oxide nanomaterials, and use non-mechanical way to apply a specific force, that is, SiO 2 At 1cm height above the dielectric layer, the restriction is released, so that the β-gallium oxide nanomaterial layer naturally drops naturally due to gravity, bonded to SiO under the influence of gravity. 2 Medium layer.

[0038] (4) After the bonding, then the SIO 2 T...

Embodiment 2

[0040] Example 2: A method of transferring gallium oxide nanoji.

[0041] The steps are as follows:

[0042] (1) A (0001) gallium nitride film is a substrate, an area of ​​2 mm × 2 mm, and a thickness of 20 μm, and a CVD method is generated on a gallium nitride film substrate to grow β-gallium oxide nanomaterials.

[0043] (2) Use polysilicon as a substrate material, deposit a layer of SiO on substrate material 2 The dielectric layer is to increase the adhesion between the gallium oxide material and the substrate and the insulation effect. SiO 2 The dielectric layer thickness is 200 nm.

[0044] (3) The growth of the β-gallium oxide nanomaterial layer is facing downward, and the mechanical manner is applied, and the β-gallium oxide nanomaterial layer is placed in SiO. 2 On the dielectric layer, the β-gallium oxide nanomaterial layer was pressed using 0.1 N to press the β-gallium oxide nanomaterial layer in SiO. 2 Medium layer.

[0045] (4) After the bonding, then the SIO 2 The die...

Embodiment 3

[0049] Example 3: A method of transferring gallium oxide nanowires.

[0050] The steps are as follows:

[0051] (1) A (0001) gallium nitride film is a substrate, an area of ​​2 mm × 2 mm, and a thickness of 20 μm, and a CVD method is generated on a gallium nitride film substrate to grow β-gallium oxide nanomaterials.

[0052] (2) Use polysilicon as a substrate material, deposit a layer of SiO on substrate material 2 The dielectric layer is to increase the adhesion between the gallium oxide material and the substrate and the insulation effect. SiO 2The dielectric layer thickness is 200 nm.

[0053] (3) The growth of the β-gallium oxide nanomaterial layer is facing downward, and the mechanical manner is applied, and the β-gallium oxide nanomaterial layer is placed in SiO. 2 On the dielectric layer, the β-gallium oxide nanomaterial layer was pressed using 0.1 N to press the β-gallium oxide nanomaterial layer in SiO. 2 Medium layer.

[0054] (4) After the bonding, then the SIO 2 The d...

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Abstract

The invention belongs to the technical field of semiconductors, in particular to a method for separating nanometer materials. The invention provides a method for transferring gallium oxide nanomaterials, comprising: growing gallium oxide nanomaterials on a first substrate; growing a dielectric layer on a second substrate, the second substrate being a transfer target layer; The gallium oxide nanomaterial on the first substrate is pressed to the dielectric layer by force, and the first substrate layer is lifted, so that the transferred gallium oxide nanomaterial can be observed on the surface of the dielectric layer on the second substrate. The invention has simple operation and high repetition rate, can effectively separate large-area oxidant nanosheets and nanobelts produced in the growth of gallium oxide materials, and can promote the characterization and analysis of gallium oxide materials and the preparation of gallium oxide-based devices.

Description

Technical field [0001] The present invention belongs to the semiconductor technology, and more particularly to the separation method of nanomaterials. Background technique [0002] The continuous spread and development of third-generation semiconductor materials, play a key role in electric electronics, aerospace, new energy, smart grids, electric vehicles and other industries. Among them, β-gallium oxide material is a semiconductor with a super-wide strap, with a direct band gap of 4.9 eV, a higher breakdown electric field and the Balega, high thermochemical stability, and high transparency to visible light Etc. [0003] At present, β-gallium oxide materials are mainly used in the preparation of a Japanese blind detector, a photocatalyst, a gas sensor, a solar cell, a phosphor and an electrode transparent conductive film, which is important for optical electrons, electrochemical. In recent years, most of the research work focuses on the analysis of β-gallium oxide nanomaterials ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/78
Inventor 方志来闫春辉蒋卓汛吴征远田朋飞张国旗
Owner 纳微朗科技(深圳)有限公司
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