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Multifunctional synaptic bionic device and preparation method thereof

A multifunctional and synaptic technology, applied in the field of artificial nerves, can solve the problems of complex circuits, high power consumption, and affecting device integration, and achieve the effects of easy integration, low power consumption, and simple preparation methods

Active Publication Date: 2019-06-21
XUZHOU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional synaptic bionic devices require the participation of various circuit elements, the circuit is complex and consumes a lot of power, and affects the integration of the device

Method used

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  • Multifunctional synaptic bionic device and preparation method thereof
  • Multifunctional synaptic bionic device and preparation method thereof
  • Multifunctional synaptic bionic device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Such as figure 1 As shown, the bionic device of this embodiment includes a copper gate 1 from bottom to top, a silicon substrate layer 2 with a resistivity of 0.001-10Ωcm, a thickness of 200-500 μm, and a silicon dioxide film layer 3 with a thickness of 30-100 nm. Wherein, the upper surface of the silicon dioxide thin film layer 3 is respectively provided with a first copper intermediate electrode 4 and a second copper intermediate electrode 5 with a pitch of 1-3 μm, and the first copper intermediate electrode 4 and the second copper intermediate electrode 5 pass through a length of Titanium dioxide nanowires 6 with a thickness of 1.5-4 μm are connected to each other, and a copper source 7 and a copper drain 8 are respectively provided on the upper surfaces of the first copper intermediate electrode 4 and the second copper intermediate electrode 5 . The thickness of the first copper intermediate electrode 4 and the second copper intermediate electrode 5 is 50-80 nm, and...

Embodiment 2

[0028] The bionic device of this embodiment comprises a platinum gate 1, a silicon substrate layer 2 with a resistivity of 0.001-10 Ωcm, a thickness of 200-500 μm, and a silicon dioxide thin film layer 3 of a thickness of 30-100 nm from bottom to top. Wherein, the upper surface of the silicon dioxide film layer 3 is respectively provided with the first platinum intermediate electrode 4 and the second platinum intermediate electrode 5 with a pitch of 1-3 μm, and the first platinum intermediate electrode 4 and the second platinum intermediate electrode 5 have a passing length of Titanium dioxide nanowires 6 of 1.5-4 μm are connected to each other, and the upper surfaces of the first platinum intermediate electrode 4 and the second platinum intermediate electrode 5 are respectively provided with a platinum source 7 and a platinum drain 8 . The thickness of the first platinum intermediate electrode 4 and the second platinum intermediate electrode 5 is 50-80 nm, and the thickness of...

Embodiment 3

[0036] The bionic device of this embodiment comprises a gold gate 1, a silicon substrate layer 2 with a resistivity of 0.001-10Ωcm, a thickness of 200-500 μm, and a silicon dioxide film layer 3 of a thickness of 30-100 nm from bottom to top. Wherein, the upper surface of the silicon dioxide thin film layer 3 is respectively provided with the first gold intermediate electrode 4 and the second gold intermediate electrode 5 with a pitch of 1-3 μm, and the first gold intermediate electrode 4 and the second gold intermediate electrode 5 have a passing length of Titanium dioxide nanowires 6 of 1.5-4 μm are connected to each other, and the upper surfaces of the first gold intermediate electrode 4 and the second gold intermediate electrode 5 are respectively provided with a gold source 7 and a gold drain 8 . The thickness of the first gold intermediate electrode 4 and the second gold intermediate electrode 5 is 50-80 nm, and the thickness of the gold source 7 , gold drain 8 and gold ga...

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Abstract

The invention discloses a multifunctional synaptic bionic device and a preparation method thereof. The multifunctional synaptic bionic device sequentially comprises a grid electrode, a silicon substrate layer and a silicon dioxide thin film layer from bottom to top, wherein a first middle electrode and a second middle electrode are arranged on the upper surface of the silicon dioxide thin film layer separately, and the two electrodes are connected through titanium dioxide nanowires; the upper surfaces of the first middle electrode and the second middle electrode are provided with a source electrode and a drain electrode respectively, wherein the source electrode and the drain electrode are used for covering the titanium dioxide nanowires on the first middle electrode and the second middleelectrode; and the layers are sequentially arranged during preparation. According to the synaptic bionic device disclosed by the invention, the single titanium dioxide nanowire is adopted as a resistance change unit, so that the structure is simple, the power consumption is low, and integration is easy; the titanium dioxide nanowires are in reliable contact with the electrodes, the performance ofthe device is stable, and various synaptic functions can be simulated; and meanwhile, the preparation method is simple, and the operability is high.

Description

technical field [0001] The invention belongs to the technical field of artificial nerves, and in particular relates to a multifunctional synaptic bionic device and a preparation method thereof. Background technique [0002] Synapse is the functional connection between neurons and the key part of information transmission. Any reflex activity in the central nervous system must be transmitted through synapses. Synaptic bionics is the key to the development of human-like computers. By simulating the way synapses process and learn information, it is expected that existing computer systems will get rid of the limitations of classical theories and have the ability to deal with more complex logic problems. Traditional synaptic bionic devices require the participation of various circuit elements, the circuit is complex and consumes a lot of power, and affects the integration of the device. The memristive device can change its own resistance state according to the change of the charg...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCY02P70/50
Inventor 齐红霞赵波
Owner XUZHOU NORMAL UNIVERSITY
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