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Graphene cleaning and transferring method

A transfer method, graphene technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve problems such as surface impurity residue, reduce impurities, avoid solution immersion, and improve electrical performance.

Inactive Publication Date: 2019-06-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is: in order to solve the problem of residual impurities on the surface of graphene transfer, the present invention provides a graphene clean transfer method that can obtain a clean graphene surface, is easy to operate and is applicable to various substrates

Method used

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Embodiment 1

[0029] A kind of graphene clean transfer method that preferred embodiment of the present invention provides, comprises the following steps:

[0030] S1. Build tape / target substrate / graphene / metal structure: transfer graphene grown on metal copper foil (graphene / copper foil) to target substrate SiO 2 / Si as an example, such as figure 1 As shown, the clean target substrate was edge-sealed on a piece of graphene / copper slightly larger than the target substrate with thermal release tape to avoid the solution entering between the graphene and the target substrate during subsequent processing;

[0031] S2. Etching: press the tape / silicon wafer / graphene / copper foil structure figure 2 In the manner shown, metal copper is etched in 1mol / L ferric chloride mixed with 5% hydrochloric acid in the etching solution to form a graphene / silicon wafer / tape structure;

[0032] S3. Cleaning: After the etching is completed, remove the graphene / silicon wafer / tape structure from the etching soluti...

Embodiment 2

[0036] A kind of graphene clean transfer method that preferred embodiment of the present invention provides, comprises the following steps:

[0037] S1. Build tape / target substrate / graphene / metal structure: transfer graphene grown on metal copper foil (graphene / copper foil) to target substrate SiO 2 / Si as an example, such as figure 1 As shown, the clean target substrate is sealed on a piece of graphene / copper slightly larger than the target substrate with an insulating tape edge, so as to avoid the solution entering between the graphene and the target substrate during subsequent processing;

[0038] S2. Etching: press the tape / silicon wafer / graphene / copper foil structure figure 2 In the way shown, metal copper is etched in a 0.3mol / L ammonium persulfate solution to form a graphene / silicon wafer / tape structure;

[0039] S3. Cleaning: After the etching is completed, remove the graphene / silicon wafer / tape structure from the etching solution, and then rinse it in deionized wat...

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Abstract

The invention discloses a graphene cleaning and transferring method. The graphene cleaning and transferring method includes the following steps: S1, a glue / target substrate / graphene / metal structure isbuilt; S2, etching is conducted to form a graphene / target substrate / glue structure; S3, rinsing is conducted; and S4, drying is conducted. In order to solve the problem of surface residual impuritiesin graphene transferring, the transferring method easy to operate and suitable for various substrates is provided, through the transferring method, the clean graphene surface can be obtained.

Description

technical field [0001] The invention belongs to the field of film material preparation. Specifically relate to a kind of graphene cleaning transfer method. Background technique [0002] Graphene is a substance with a honeycomb structure composed of carbon atoms. Graphene is a single atomic layer two-dimensional crystal in which carbon atoms are tightly packed in a hexagonal structure. It is the thinnest two-dimensional material in the world. Due to the excellent mechanical, electronic and thermal stability properties of graphene, its application in electronic devices, electrodes, capacitors, sensors and composite materials has attracted widespread attention and has become a current international hot research field. Since 2008, people have used chemical vapor deposition to synthesize centimeter-sized graphene films on various metal substrates (Cu, Ni, Co, Ir, Ru, Pd, Pt, etc.), which has inspired academia and industry. extensive attention. However, the metal substrate is o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
Inventor 青芳竹牛宇婷李雪松
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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