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High-quality semi-polar two-dimensional ultra-thin indium nitrogen/gallium nitride laminated structure and preparation method thereof

A stacked structure, semi-polar technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor lasers, etc., can solve problems such as large stress, limited theoretical research results, etc.

Pending Publication Date: 2019-06-04
纳微朗科技(深圳)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lattice mismatch between indium nitrogen and gallium nitride causes a large stress on the indium nitrogen / gallium nitride structure. An important research topic in the preparation of gallium nitride stacked structures, the current research on semi-polar indium nitride / gallium nitride stacked structures is limited to theoretical research results

Method used

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  • High-quality semi-polar two-dimensional ultra-thin indium nitrogen/gallium nitride laminated structure and preparation method thereof
  • High-quality semi-polar two-dimensional ultra-thin indium nitrogen/gallium nitride laminated structure and preparation method thereof
  • High-quality semi-polar two-dimensional ultra-thin indium nitrogen/gallium nitride laminated structure and preparation method thereof

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preparation example Construction

[0067] This embodiment provides a method for preparing a high-quality semipolar {11-22} two-dimensional ultra-thin indium nitride / gallium nitride stack structure, the steps are as follows:

[0068] (1) growing semipolar {11-22} gallium nitride thin films on the substrate;

[0069] (2) In the reaction chamber, a periodic two-dimensional ultra-thin indium nitride / gallium nitride stack structure is grown on the semipolar {11-22} gallium nitride film.

[0070] The growth process of the two-dimensional ultra-thin InN / GaN stack structure is:

[0071] growing an indium nitride layer;

[0072] Grow a thin layer of gallium nitride at the same growth temperature as the indium nitride layer;

[0073] GaN barrier layer is grown.

[0074] This embodiment also provides a high-quality semipolar {11-22} two-dimensional ultra-thin indium nitride / gallium nitride stack structure, such as figure 1 As shown, it includes a substrate, a semipolar gallium nitride film, and a two-dimensional ultra...

Embodiment 1

[0076] Example 1: High-quality semipolar {11-22} two-dimensional ultra-thin indium nitride / gallium nitride stacked structure

[0077] (1) growing semipolar {11-22} gallium nitride thin films on the substrate;

[0078] (2) A 20-period two-dimensional ultrathin indium nitride / gallium nitride stack structure was grown on the prepared semipolar {11-22} gallium nitride film;

[0079] The growth parameters of the two-dimensional ultrathin InN / GaN stack structure are as follows:

[0080] The pressure in the reaction chamber is in the range of 300Torr, and the two-dimensional ultra-thin indium nitride / gallium nitride stack structure is grown;

[0081] Indium nitrogen layer: the substrate temperature is 680° C.; the thickness of the indium nitrogen layer is ~1 nm.

[0082] Subsequently, before growing the gallium nitride barrier layer, a thin layer of gallium nitride is grown as a protective layer of indium nitrogen, the growth temperature is the same as that of the indium nitride la...

Embodiment 2

[0085] Example 2: High-quality semipolar {11-22} two-dimensional ultra-thin indium nitride / gallium nitride stacked structure

[0086] (1) growing semipolar {11-22} gallium nitride thin films on the substrate;

[0087] (2) A 30-period two-dimensional ultrathin indium nitride / gallium nitride stack structure was grown on the prepared semipolar {11-22} gallium nitride film;

[0088] The growth parameters of the two-dimensional ultrathin InN / GaN stack structure are as follows:

[0089] The pressure in the reaction chamber is in the range of 300Torr, and the two-dimensional ultra-thin indium nitride / gallium nitride stack structure is grown;

[0090] Indium nitrogen layer: the substrate temperature is 680° C.; the thickness of the indium nitrogen layer is ~0.6 nm.

[0091] Subsequently, before growing the gallium nitride barrier layer, a thin layer of gallium nitride is grown as a protective layer of indium nitrogen, the growth temperature is the same as that of the indium nitride ...

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Abstract

The invention belongs to the technical field of semiconductor materials, and particularly relates to a high-quality semi-polar two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure and a preparation method thereof. The preparation method includes the following steps: growing a semi-polar gallium nitride film on a substrate; and controlling the cavity environment and growing a two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure on the semi-polar gallium nitride film. The semi-polar two-dimensional ultra-thin indium nitrogen / gallium nitride laminated structure can directly avoid the influence of the miscibility gap between indium nitrogen and gallium nitride in the system of indium-gallium-nitrogen materials and the phase separation, component fluctuation and low indium doping efficiency of indium-gallium-nitrogen materials on the crystal quality and luminescent property of the materials, and improve the efficiency of light emission andlight absorption. Light emitting diodes, lasers, photoelectric detectors and solar cells with higher photoelectric conversion efficiency, higher stability, higher luminous efficiency and coverage from the ultraviolet band to the infrared band can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a stacked structure, a superlattice or quantum well stacked structure epitaxial wafer and a preparation method thereof. Background technique [0002] Since the In gallium nitride material with high indium composition faces problems such as low indium doping efficiency, indium agglomeration, phase separation, high density penetrating defects, and strong polarization field, new technologies are needed to solve or improve the above problems. Therefore, the work efficiency of the existing device is further improved and the energy consumption is reduced. The indium nitride / gallium nitride stack structure has been widely studied due to its advantages of no component fluctuation and no phase separation. The indium nitride / gallium nitride stack structure can directly control the luminous wavelength by directly controlling the thickness of the indium nitride a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/0304H01L33/32H01S5/343
Inventor 方志来吴征远田朋飞闫春辉张国旗
Owner 纳微朗科技(深圳)有限公司
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