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High-quality LED (light emitting diode) manufacturing method

A technology of light-emitting diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve problems such as acid corrosion, failure to be well suppressed, material damage, etc., to achieve The effect of improving quality, avoiding damage, and increasing efficiency

Active Publication Date: 2019-05-31
深圳广盛浩科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a method for manufacturing high-quality light-emitting diodes, which has the advantages of environmental protection, safety, and high efficiency, and solves the problem of material damage to the human body and acid erosion of silicon in the manufacturing process of the existing light-emitting diodes. surface, can not be well suppressed and other issues

Method used

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Embodiment Construction

[0034] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] The present invention provides a kind of technical scheme: comprise the steps:

[0036]S1. Wafer inspection: Including wafer type, wafer thickness, wafer state and silicon wafer resistivity, check whether the wafer is N-type or P-type, specifically by heating needle A, electrons from point A diffuse to point B , the potential of point A is higher than that of point B, and the pointer of the galvanometer deviates to the right, it can be determined that the silicon wafer...

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PUM

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Abstract

The invention discloses a high-quality LED manufacturing method which comprises the following steps of S1) silicon chip inspection; S2) silicon chip cleaning; S3) silicon chip polishing; S4) diffusion; S5) thermal oxidation; S6) photo-etching; S7) alloy sintering; S8) vacuum film coating; S9) angle making in the inclined side; S10) welding; S11) pickling; S12) solidification of white glue; S13) moulding; and S14) post treatment. The method is reasonable in design, a selective diffusion area is etched in a silicon dioxide layer of a silicon chip by thermal oxidation, impurities can be diffusedto the silicon chip in the area, a pneumatic (non-contact) measuring instrument is used for measurement to avoid damage on the surface of the silicon chip, and improve the quality of the raw materialsilicon chip fundamentally, and via silica mechanical polishing, SiO2 colloid generates mechanical friction on the silicon chip, and polishing is used to remove the surface damage layer.

Description

technical field [0001] The invention relates to the technical field of diode manufacture, in particular to a method for manufacturing a high-quality light-emitting diode. Background technique [0002] A diode is a two-terminal device with unidirectional conduction. It is divided into electronic diodes and crystal diodes. Electronic diodes are less efficient than crystal diodes due to the heat loss of the filament, so they are rarely seen now. They are more common and commonly used. is a crystal diode. The unidirectional conduction characteristics of diodes, semiconductor diodes are used in almost all electronic circuits, it plays an important role in many circuits, it is one of the earliest semiconductor devices, and its applications are also very wide. In the manufacturing process of diodes, the cleaning effect of raw material silicon is average, and the Au and Pt metals on the silicon surface are difficult to clean, and it is easy to cause scratches on the surface of sili...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/02H01L21/22H01L21/304H01L21/66
Inventor 邓博强
Owner 深圳广盛浩科技有限公司
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