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High-thermal-conductivity brazing filler metal suitable for packaging power semiconductor device

A power semiconductor and device packaging technology, applied in the direction of welding/cutting media/materials, welding media, manufacturing tools, etc., can solve the problems of high energy consumption, corrosion of the substrate, etc., and achieve improved heat dissipation, low production costs, and fewer steps Effect

Inactive Publication Date: 2019-05-17
广东中实金属有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, aluminum and aluminum alloys have some defects in the welding process.
Ordinary aluminum brazing temperature is above 600°C, which consumes a lot of energy. The flux used is mainly metal salt, and the welding residue will corrode the substrate. Currently, soft soldering materials cannot meet this welding requirement.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] First weigh the materials according to the following proportions: powdered nano-MgO: 0.1%, powdered nano-NiO: 0.2%, Sn block: the balance; then put the tin block into the heating furnace, heat up to 600°C, stir, and wait until all After melting, keep it warm for 5 minutes; then put the weighed MgO and NiO nano heat-conducting materials into a high-temperature-resistant container with uniform small holes, and then immerse the container in tin liquid, stirring constantly, so that the melted nano-heat conducting materials in the container Evenly disperse in the tin liquid through small holes and keep warm for 20 minutes; finally take out the high-temperature resistant container, cool the furnace to 320°C, stir continuously, cast a mold, cool and form, and you can get a high thermal conductivity solder suitable for power semiconductor device packaging .

Embodiment 2

[0021] First weigh the materials according to the following proportions: powdered nano-MgO: 0.05%, powdered nano-ZnO: 0.05%, powdered nano-NiO: 0.3%, Sn block: balance; then put the tin block into the heating furnace and heat up to Stir at 600°C, keep it warm for 5 minutes after it is completely melted; then put the weighed MgO, ZnO, and NiO nano-thermal conductive materials into a high-temperature-resistant container with uniform small holes, and then immerse the container in tin liquid, Stir continuously, so that the melted nano-thermal conductive material in the container is evenly dispersed in the tin liquid through small holes, and keep warm for 20 minutes; finally take out the high-temperature resistant container, cool the furnace to 320°C, stir continuously, cast a mold, and cool to form, you can get High thermal conductivity solder for power semiconductor device packaging.

Embodiment 3

[0023] First weigh the materials according to the following proportions: powdered nano-ZnO: 0.1%, powdered nano-NiO: 0.2%, Sn block: the balance; then put the tin block into the heating furnace, raise the temperature to 600°C, stir, and wait for it to completely After melting, keep it warm for 5 minutes; then put the weighed ZnO and NiO nano heat-conducting materials into a high-temperature-resistant container with uniform small holes, and then immerse the container in tin liquid, stirring constantly, so that the melted nano-heat conducting materials in the container Evenly disperse in the tin liquid through small holes and keep warm for 20 minutes; finally take out the high-temperature resistant container, cool the furnace to 320°C, stir continuously, cast a mold, cool and form, and you can get a high thermal conductivity solder suitable for power semiconductor device packaging .

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Abstract

The invention discloses a high-thermal-conductivity brazing filler metal suitable for packaging a power semiconductor device. The high-thermal-conductivity brazing filler metal is composed of the following components of, in percentage by weight, 0.01-0.5% of nano heat-conducting material and the balance Sn, wherein the nano heat-conducting material is MgO and / or ZnO and NiO. The brazing filler metal is made of the nano heat-conducting material, the heat conduction performance of the brazing filler metal is good, welding temperature is low in the using process, energy consumption is low, the welding process is excellent in operation, residual corrosion after welding is small, so that the brazing filter material is suitable for packaging the power semiconductor device, and can replace an existing aluminum soft soldering flux. The invention further discloses a preparation method of the high-thermal-conductivity brazing filler metal suitable for packaging the power semiconductor device. The preparation method disclosed by the invention has the advantages that steps are few, specific equipment is not required to be customized, the production is simple and convenient, and the productioncost is low.

Description

technical field [0001] The invention belongs to the technical field of solder and relates to a high thermal conductivity solder suitable for power semiconductor device packaging. Background technique [0002] At present, in some power semiconductors, due to the particularity of components, substrates need to use materials with fast thermal conductivity. Aluminum and aluminum alloys have good electrical and thermal conductivity, which is conducive to electrical conduction and heat dissipation of soldered joints. Therefore, aluminum is generally selected for power components. substrate. However, aluminum and aluminum alloys have some defects in the welding process. Ordinary aluminum brazing has a welding temperature above 600°C and consumes a lot of energy. The flux used is mainly metal salt, and the welding residue will corrode the substrate. Currently, soft brazing solder cannot meet the welding requirements. Contents of the invention [0003] The invention provides a hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/26C22C13/00
Inventor 方瀚宽范欢方瀚楷方喜波梁静珊郭瑞·弗拉基米尔
Owner 广东中实金属有限公司
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